5 results about "Vapor phase" patented technology

A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.

A liquid feed material such as a heavy hydrocarbon feed in liquid form is contacted with a fluidized bed of heated solid particles which have a bulk horizontal velocity which is generally perpendicular to the flow of a fluidizing medium. The liquid feed material reacts on the solid particles to produce a vapor phase product, which vapor phase product is collected in a vapor collection apparatus.

The invention discloses a rectification device for biodiesel purification. The rectification device comprises a tower body, a vapor phase outlet, a raffinate outlet, a feeding inlet, baffling trays and heating plates. The vapor phase outlet is arranged on the top of the tower body, the raffinate outlet is arranged at the bottom of the tower body, the feeding inlet is arranged at the side wall of the tower body and is communicated with a raw material source with a crude biodiesel raw material, the baffling trays are arranged above the feeding inlet, the heating plates are arranged below the feeding inlet, the heating plates form a spiral structure and the spiral structure axially extends along a tower body axial direction. The heating plates form a spiral structure and heating stopping is avoided when flows flow on the heating plates so that the heating process is continuous, heat exchange effects are improved, heat exchange efficiency is improved, and rectification device performances are improved.