Semiconductor device with capacitor

[0022] see figure 2 , the present invention provides a semiconductor device with a capacitor, which has a plurality of functional devices 11 on the upper surface of a semiconductor substrate 10, and the functional devices 11 may be transistors; a MIM capacitor formed on the functional device 11; wherein, the The MIM capacitor is perpendicular to the upper surface and covered by an insulating layer 15, the insulating layer is a single silicon oxide material, and a part of the insulating layer 15 is used as a dielectric layer of the capacitor. The MIM capacitor includes a first metal plate 12a and a second metal plate 13a perpendicular to the upper surface and an insulating layer between the first and second metal plates 12a, 13a.

[0023] There is a shielding layer 16 between the MIM capacitor and the functional device 11 , the shielding layer 16 is a grounded metal layer made of conductive hard metal such as copper, titanium, aluminum, nickel and the like.

[0024] A stress buf