Method for preparing silicon carbide ceramic material with low residual silicon by adopting multi-step reaction sintering method

A technology of silicon carbide ceramics and sintering method, which is applied in the field of silicon carbide ceramics sintering, can solve the problems of high residual silicon content and limitations, and achieve the effect of expanding the scope of application

Active Publication Date: 2017-03-08
咸阳瞪羚谷新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented process allows for creation of small particles called fine powders made from SiC material without causing damage or affect its physical characteristics during production processes. By reactively sinterring these tiny grains together into larger structures, it becomes possible to make stronger components like those used in electronic devices while maintain their original shape when they are being manufactured.

Problems solved by technology

This patents describes different ways to make highly pure mono-cristobalt silicate cerams that exhibit excellent mechanical qualities like tensile stiffness, compression hardening capacity, abrasion resistence, chemical stability under severe conditions, and good physical characteristics when combined into specific structures called SiC ceramies. Current processes involve either mixing raw material together beforehand or performing post processing steps afterwards, resulting in reduced productivity due to increased time required for production cycles.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] In this embodiment, a multi-step reaction sintering method is used to prepare a silicon carbide kiln conveyor chain, which specifically includes the following steps:

[0029] The first step is to select nano-carbon black as the carbon source with high activity and petroleum coke as the carbon source with low activity through testing;

[0030] In the second step, mix nano-carbon black, 20wt.% petroleum coke and 48wt.% silicon carbide powder with a mass fraction of 30wt.%, and add a phenolic resin with a mass fraction of 2wt.%. First use wet mixing with a rotation speed of 180r / min, mix the powder for 4h, then dry mix, the speed is 100r / min, mix the powder for 5h;

[0031] The third step is to use the method of compression molding to press the powder, fill the powder evenly into the mold, and use the pressure of 30MPa ~ 60MPa to carry out two-way pressure, and the holding time is 30S;

[0032] The fourth step is to place the green body molded in the third step on the f

Embodiment 2

[0037] In this embodiment, a silicon carbide tube heat exchanger is prepared by reaction sintering, which specifically includes the following steps:

[0038] The first step is to obtain the carbon source activity through X-ray diffraction analysis, and choose petroleum coke, mesocarbon microspheres, and graphite as the added carbon source;

[0039] In the second step, 15wt.% of petroleum coke, 20wt.% of mesophase carbon microspheres, 20wt.% of graphite and 40wt.% of silicon carbide powder were mixed, and 5wt.% of hydroxyethyl cellulose was added. ;Use a planetary ball mill for wet mixing for 4 hours at a speed of 200r / min, and after drying, use a planetary ball mill for dry mixing for 3 hours at a speed of 120r / min;

[0040] The third step is to shape the uniformly mixed raw materials, add water 0.2 times the weight of the powder to the powder, and use extrusion molding to form the green body. The length of the shaping section is 28mm, the extrusion angle is 45o, and the radi

Embodiment 3

[0046] This embodiment adopts the method of reaction sintering to prepare silicon carbide reflective mirror, specifically including the following steps:

[0047] In the first step, Raman spectroscopy and transmission electron microscopy are used to evaluate the activity of carbon sources, and nano-carbon black and graphite are selected as composite carbon sources for addition;

[0048] In the second step, mix nano-carbon black, 20wt.% graphite, and 45wt.% silicon carbide powder with a mass fraction of 25wt.%, and add PVA with a mass fraction of 10wt.%. First use wet mixing with a speed of 180r / min , mixed powder for 4 hours, then dry mixed at a speed of 100r / min, and mixed powder for 5 hours;

[0049] The third step is to use the method of compression molding to press the powder, fill the powder evenly into the mold, and use the pressure of 30MPa ~ 60MPa to carry out two-way pressure, and the holding time is 30S;

[0050] The fourth step is to place the green body molded in

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Abstract

A method for preparing a silicon carbide ceramic material with low residual silicon by adopting a multi-step reaction sintering method comprises steps as follows: carbon sources are selected, the carbon sources with different activity degrees are mixed with silicon carbide powder, phenolic resin or PVA (polyvinyl acetate) is added, the materials are mixed and subjected to powder forming, siliconizing sintering and heat treatment for removing residual silicon, finally, an obtained silicon carbide product is polished, carbon and silicon condensed on the surface are removed, the coarse surface is flattened, and a qualified silicon carbide finished product is obtained. According to the method, the problem that application of a conventional reaction sintered silicon carbide ceramic material in high temperature and corrosion environments and a high temperature difference environment is limited due to higher content of residual silicon is solved, the silicon carbide ceramic material with low residual silicon and high density can be prepared, heat-conducting property, high-temperature mechanical property, Young modulus, corrosion resistance, high-temperature conductivity and other properties of the reaction sintered silicon carbide material are greatly improved, and the application range of the reaction sintered silicon carbide material is greatly enlarged.

Description

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Claims

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Application Information

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Owner 咸阳瞪羚谷新材料科技有限公司
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