In2O3 hollow nanosphere coated by nitrogen and sulfur doped carbon layer and preparation method of the In2O3 hollow nanosphere

A hollow nano, sulfur element technology, applied in chemical instruments and methods, gallium/indium/thallium compounds, inorganic chemistry, etc., to achieve the effect of uniform morphology

Inactive Publication Date: 2019-12-27
XUZHOU NORMAL UNIVERSITY
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented process allows for creating small particles that have regular sizes and shapes like those found naturally occurring materials such as carbon black or silica gel. These tiny particles can be used to make special types of objects called quantum dots (QDS).

Problems solved by technology

The technical problem addressed in this patented method for creating new types of molecular sieves that are highly effective catalysts used in chemical reactions or gas separation processes due their ability to selectively absorb certain compounds from gases without losing them altogether when they pass over other solvents like water vapor during heat treatment.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • In2O3 hollow nanosphere coated by nitrogen and sulfur doped carbon layer and preparation method of the In2O3 hollow nanosphere
  • In2O3 hollow nanosphere coated by nitrogen and sulfur doped carbon layer and preparation method of the In2O3 hollow nanosphere
  • In2O3 hollow nanosphere coated by nitrogen and sulfur doped carbon layer and preparation method of the In2O3 hollow nanosphere

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0026] A nitrogen, sulfur element doped carbon layer wrapped In 2 o 3 The preparation method of hollow nanosphere comprises the following steps:

[0027] (1) Preparation of precursors: Dissolve indium nitrate tetrahydrate (0.078g), 2,5-pyridinedicarboxylic acid (0.03g) and 2,1,3-benzisothiazol-3-one (0.02g) In 10mL of N,N-dimethylformamide and water mixed solution with a volume ratio of 6:4, the above solution was ultrasonically dispersed for 10min, and then the mixed solution was transferred to a 50mL polytetrafluoroethylene reactor and heated to 120°C, reaction time 6h. The product was collected by centrifugation, and then washed several times with industrial alcohol to obtain the precursor In(OH)(2,5-PDC), which was dried for use.

[0028] figure 1 Shown is the XRD of the precursor In(OH)(2,5-PDC) ( figure 1 a) and SEM images ( figure 1 b), SEM image shows that hollow nanospheres with uniform size are successfully synthesized, and XRD proves that the synthesized substanc

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of In2O3 hollow nanospheres coated by a nitrogen and sulfur doped carbon layer. The preparation method comprises the following steps: with spherical In(OH)(2,5-PDC) with uniform size and morphology as a precursor, setting proper calcining temperature, calcining time and calcining atmosphere to form indium oxide hollow nanospheres, which are uniform insize and uniformly coated with N and S element doped carbon layers. The N and S elements in the precursor In(OH) (2,5-PDC) hollow sphere are introduced by adding a nitrogen-rich organic ligand (2,5-pyridine dicarboxylic acid) and a nitrogen and sulfur-rich regulator (2,1,3-benzoisothiazole-3-ketone), and the N and S element doped C-coated In2O3 hollow nanosphere is obtained after heat treatment. According to the preparation method disclosed by the invention, the In(OH) (2,5-PDC) hollow sphere with uniform size and morphology is synthesized through a one-step simple solvothermal reaction.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner XUZHOU NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products