In2O3 hollow nanosphere coated by nitrogen and sulfur doped carbon layer and preparation method of the In2O3 hollow nanosphere
A hollow nano, sulfur element technology, applied in chemical instruments and methods, gallium/indium/thallium compounds, inorganic chemistry, etc., to achieve the effect of uniform morphology
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
Embodiment
[0026] A nitrogen, sulfur element doped carbon layer wrapped In 2 o 3 The preparation method of hollow nanosphere comprises the following steps:
[0027] (1) Preparation of precursors: Dissolve indium nitrate tetrahydrate (0.078g), 2,5-pyridinedicarboxylic acid (0.03g) and 2,1,3-benzisothiazol-3-one (0.02g) In 10mL of N,N-dimethylformamide and water mixed solution with a volume ratio of 6:4, the above solution was ultrasonically dispersed for 10min, and then the mixed solution was transferred to a 50mL polytetrafluoroethylene reactor and heated to 120°C, reaction time 6h. The product was collected by centrifugation, and then washed several times with industrial alcohol to obtain the precursor In(OH)(2,5-PDC), which was dried for use.
[0028] figure 1 Shown is the XRD of the precursor In(OH)(2,5-PDC) ( figure 1 a) and SEM images ( figure 1 b), SEM image shows that hollow nanospheres with uniform size are successfully synthesized, and XRD proves that the synthesized substanc
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap