SBG semiconductor laser device using electrode to realize sampling

[0022] The present embodiment provides a kind of SBG semiconductor laser device that realizes sampling with three electrodes, as figure 2 As shown, the grating along the laser cavity is a uniform grating, which has three electrically isolated electrodes, and the center of the sampling pattern formed by the middle electrode and the conductive area between the ridges can be a uniform sampling pattern with or without equivalent phase shift. Both ends of the laser are coated with high anti-reflection coating.

[0023] The implementation principle of the fine adjustment of the lasing wavelength of the SBG semiconductor laser device in this embodiment is as follows:

[0024] we take figure 2 As an example to illustrate, for the sake of simplicity, let the lengths of the electrodes at both ends and the middle electrode be L R = L, L P =L, then when the electrodes at both ends of the laser are injected with the same current density and the middle electrode is injected with different

[0028] The present embodiment provides a kind of SBG semiconductor laser device that realizes sampling with two electrodes, as image 3 As shown, the grating along the laser cavity is a uniform grating, which has two electrically isolated electrodes, and the two ends of the laser are coated with high reflection film and high anti-reflection film respectively.

[0029] The implementation principle of the fine adjustment of the lasing wavelength of the SBG semiconductor laser device in this embodiment is as follows:

[0030] we take figure 2 As an example to explain, for the sake of simplicity, the lengths of the end electrodes coated with high anti-reflection coating and high reflection coating are respectively L P =L, then when the two electrodes of the laser are injected with different current densities, the effective refractive index n of the laser cavity under the two electrodes of the laser R and n P will be different, and also in the lasing channel will obtain a distri