Method and device for improving SiC crystal growth efficiency and quality

A technology of crystal growth and efficiency, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of slow process, low efficiency, slow growth rate of SiC crystal, etc., and achieve the effect of saving heating cost

Active Publication Date: 2021-09-28
SIEN QINGDAO INTEGRATED CIRCUITS CO LTD
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Problems solved by technology

[0008] At present, the PVT (physical-vapor-transport, physical vapor transport technology) commonly used in the industry grows SiC crystals at a rate of around 0.3mm/Hour. The growth rate of SiC crystals is very slow, and it is difficult to increase production capacity. The SiC crystal substrate material Preparation has become a bottleneck restricting the development of SiC ind...

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  • Method and device for improving SiC crystal growth efficiency and quality
  • Method and device for improving SiC crystal growth efficiency and quality
  • Method and device for improving SiC crystal growth efficiency and quality

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Embodiment Construction

[0044] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0045] It should be noted that terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit this specification. The practicable scope of the invention and the change or adjustment of its relative relationship shall also be regarded as the practicable scope of the present invention without any substantial change in the technical content.

[0046] Such as figure 1 Shown is a traditional PVT production device, which includes: a graphite crucible 01, a graphite isolation layer 02 is arranged outside the graphite crucible 01, a heating coil 03 is arranged outside the graphite isolation layer 02, and the temperature d...

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Abstract

The invention discloses a method and a device for improving SiC crystal growth efficiency and quality. The method comprises the steps: obtaining gaseous Si through liquid Si; introducing gaseous CH4, cracking CH4 at a set temperature, then reacting with gaseous Si, pulling and rotating the seed crystal in a protective gas atmosphere to realize regulation and control and stabilization of a thermal field before growth of the SiC crystal and growth of a large-mass SiC single crystal so as to obtain the SiC crystal ingot. The device is used for realizing the method and comprises a crucible isolating layer and a heating unit, an isolation unit is arranged in the crucible, a first outlet is formed in the isolation unit, a first inlet connected with a first gas source is formed above the isolation unit, a second outlet connected with a gas treatment unit is formed above the crucible, a seed crystal rotating and lifting unit is arranged at the top in the crucible, and seed crystals are arranged below the seed crystal rotating and lifting unit; and the laser beams are additionally arranged so that regulation and control of the thermal field at the front edge of crystal growth are provided, and optimization of the radial growth uniformity of the crystal and adjustment of the axial temperature gradient are facilitated.

Description

technical field [0001] The invention relates to the field of crystal growth in semiconductor device technology, in particular to a method and device for improving SiC crystal growth efficiency and quality. Background technique [0002] Compared with silicon materials, silicon carbide (SiC) has the advantages of high critical breakdown electric field and high electron mobility. It is an excellent semiconductor material for manufacturing high-voltage, high-temperature, and radiation-resistant power semiconductor devices. It is the third-generation semiconductor material with the highest degree of modernization and the most mature technology. [0003] Compared with silicon materials, the main characteristics of SiC materials include: [0004] (1) The critical breakdown electric field strength is nearly 10 times that of silicon materials; [0005] (2) High thermal conductivity, more than three times that of silicon materials; [0006] (3) The drift speed of saturated electron...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/36
CPCC30B25/00C30B29/36
Inventor 卢合强刘佑铭平延磊吴荘荘
Owner SIEN QINGDAO INTEGRATED CIRCUITS CO LTD
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