Semiconductor memory device

[0042]Referring to the drawings, embodiments of the invention will be described in detail below.

[0043]A circuit element forming each block in the embodiments is not particularly limited, however, the circuit element is formed on one semiconductor substrate made of monocrystalline silicon and others. A metal oxide semiconductor field effect transistor (MOSFET) without an arrow denotes N-type MOSFET (NMOSFET) and is distinguished from P-type MOSFET (PMOSFET) with an arrow. The MOSFET will be briefly called MOS below. However, the invention is not limited to only a field effect transistor including an oxide insulating film provided between a metal gate and a semiconductor layer and is applied to a circuit using general FET such as a metal insulator semiconductor field effect transistor (MISFET).

[0044]FIG. 1 shows the embodiment of the invention. FIG. 1 shows an example of the configuration of a timing control circuit for controlling the timing of column operation in a read command for a d