Light emitting diode structure

[0014]Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.

[0015]Refer to FIG. 1. FIG. 1 illustrates a cross-section view diagram of an embodiment of the light-emitting diode structure of the invention. The light-emitting diode structure 100 includes a substrate 110, a semiconductor laminated layers 120 formed on the substrate 110, a barrier layer 130 formed on the semiconductor laminated layers 120, and a contact layer 140 formed on the barrier layer 130. The contact layer 140 may be a metal layer. The barrier layer 130 of the light-emitting diode structure 100 may prevent the metal atoms of the contact layer 140 diffusing into the semiconductor laminated layers 120, and also reduce the reaction or the phase transformation between the contact layer 140 and the