Semiconductor device and method of manufacturing the same

Inactive Publication Date: 2009-01-29
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

Problems solved by technology

This patent discusses how reducing the influence of parasitic capacitances can improve performance of transistor devices. However, current techniques are limited due to their potential impacts on other components within the device.

Method used

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  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0028]A semiconductor device of the first embodiment will be explained referring to a sectional view shown in FIG. 1. FIG. 1 shows an exemplary case where a semiconductor device is placed on a lead frame.

[0029]As shown in FIG. 1, a semiconductor device 30 has a semiconductor element 32, a frame component 36 provided over the semiconductor element 32 while forming a cavity 38 therein, and a molding resin layer 42 covering around the frame component 36. Electrode pads of the semiconductor element 32 are electrically connected via wires 40 to a lead frame 31.

[0030]The frame component 36 has a hollow structure composed of a first resin film 57a provided as being risen up around an active region 34 of the semiconductor element 32, and a second resin film 58a tightly closing the space surrounded by the first resin film 57a. As shown in FIG. 3B, given as a partially enlarged view of the frame component 36, the thickness “a” of the first resin film 57a is approximately 5 to 50 μm, and the heig

second embodiment

[0067]FIG. 5 shows a semiconductor device of a In this embodiment, the first resin film 57a is left unremoved not only around the gate, but also around the pads. This configuration raises an advantage in that the cavity may be formed in a stable manner, when the photosensitive sheet-like second resin film 58 is bonded.

[0068]FIG. 6 shows a semiconductor device of a third embodiment. In this embodiment, contact area between the first resin film 57a and the second resin film 58a is increased as compared with that in the second embodiment. By virtue of this configuration, adhesiveness between the resins may be made stronger, and thereby yield ratio of the semiconductor device may be improved.

[0069]FIG. 7 shows a semiconductor device of a fourth embodiment. Although this embodiment has a structure different in arrangement of the gates, sources and drain from those in the first to third embodiments, the active region 34 may be covered with the frame component 36 having the cavity 38 therein

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Abstract

Aiming at providing a semiconductor device advanced in performance of transistors, and improved in reliability, a semiconductor device of the present invention has a semiconductor element, a frame component provided over the semiconductor element, while forming a cavity therein, and a molding resin layer covering around the frame component, wherein the frame component is composed of a plurality of resin films (a first resin film and a second resin film) containing the same resin, and the cavity allows the active region of the semiconductor element to expose therein.

Description

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Claims

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Application Information

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Owner RENESAS ELECTRONICS CORP
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