Sensor chip and distance measurement device

Pending Publication Date: 2022-06-09
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0064]In the sensor chip 1 of the present embodiment, the pixel separation section 12 extending in the semiconductor substrate 11 from the front surface (the surface 11S1) toward the back surface (the surface 11S2) and having the bottom 12S in the semiconductor substrate 11 is provided between the pixels in the pixel array section R1 in which the plurality of pixels P is arranged in an array, and the p-well 21 formed in the semiconductor substrate 11 is thereby shared by the plurality of pixels. This makes it unnecessary to provide an anode for each pixel P, thus making it possible for the anode to be shared by the plurality of pixels. This will be described in the following.
[0065]FIG. 6 schematically illustrates a cross-sectional configuration of a typical sensor chip 100 as a reference example. In the typical sensor chip including an avalanche photodiode element for each pixel P, as described above, the inter-pixel separation section that physically separates a pixel from another adjacent pixel is provided in order to prevent color mixture resulting from hot-carrier light emission between adjacent pixels. The pixel separation section penetrates a semiconductor substrate 1100 like the pixel separation section 1200 illustrated in FIG. 6, and the semiconductor substrate 1100 is separated into pieces for individual pixels P. Accordingly, in the sensor chip 100, it is necessary to provide an anode 2410, wiring lines to be coupled thereto, etc. for each pixel P.
[0066]In the sensor chip having the above-described configuration, it is necessary to secure a region in which the anode is to be formed in the pixel P, and this makes it difficult to reduce a pixel size.
[0067]In contrast, in the present embodiment, the bottom 12S of the pixel separation section 12 is provided in the semiconductor substrate 11, and the p-well 21 formed in the semiconductor subst

Problems solved by technology

In a distance measurement image sensor (a distance measurement device) that uses a single photon avalanche diode (SPAD), light emission in a high electric field region in a

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example

[0031]2-1. Modification Example 1 (an example in which a pixel separation section is further provided on side of a light entrance surface)

Example

[0032]2-2. Modification Example 2 (an example in which a wiring line is coupled to the pixel separation section)

Example

[0033]2-3. Modification Example 3 (an example in which a semiconductor substrate and an inter-pixel light-blocking film are electrically coupled to each other in a peripheral section)

3. Example of Application

1. Embodiment

[0034]FIG. 1 schematically illustrates an example of a cross-sectional configuration of a sensor chip (a sensor chip 1) according to an embodiment of the present disclosure. FIG. 2 schematically illustrates an example of a planar configuration of a pixel array section R1 of the sensor chip 1 illustrated in FIG. 1. FIG. 3 is a block diagram illustrating a configuration of the sensor chip 1 illustrated in FIG. 1, and FIG. 4 illustrates an example of an equivalent circuit of a pixel P of the sensor chip 1 illustrated in FIG. 1. The sensor chip 1 is configured to be applied to, for example, a distance image sensor (a distance measurement device), an image sensor, or the like that performs distance measurements by a ToF (Time-of-Flight) method.

[0035]The sensor chip 1 includ

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PUM

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Abstract

A sensor chip of an embodiment of the present disclosure includes: a semiconductor substrate including a pixel array section in which a plurality of pixels is arranged in an array; a light receiving element provided in the semiconductor substrate for each of the pixels and including a multiplier region in which avalanche multiplication of carriers is caused by a high electric field region; and a first pixel separation section provided between the pixels, the first pixel separation section extending from one surface of the semiconductor substrate toward another surface thereof opposed to the one surface, and having a bottom in the semiconductor substrate.

Description

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Claims

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Application Information

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Owner SONY SEMICON SOLUTIONS CORP
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