Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole

Inactive Publication Date: 2007-12-11
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Two kinds of known failures in such devices result from an increase and a decrease in the resistance of the cell pad contact hole detected, for example, during Electrical Die Sorting (EDS) testing of the integrated circuit device.
The integrated circuit device may then have a refresh failure as a result of a reduction of a sensing margin of the device from the voltage drop of the cell pad contact hole.
The resulting cell pad contact hole may exhibit a very low resistance.
As a result, the high voltage level of data transmitted from the peripheral circuit region through the cell pad contact hole may affect (leak into) an adjacent channel region under a gate of the integrated circuit dev

Method used

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  • Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole
  • Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole
  • Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole

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Embodiment Construction

[0026]The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout. It will be understood that when an element is referred to as being “on” or “connected to” or “coupled to” another element, it can be directly on, connected to or coupled to the other element or intervening layers or elements may also be present. In contrast, when an element is referred to as being “directly on” or “directly connected to” or “directly coupled to” another element, there are no intervening layers or elements present. The relative thickness of l

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Abstract

Methods of forming a cell pad contact hole on an integrated circuit include forming adjacent gates on an integrated circuit substrate having a source/drain region extending between the gates. Gate spacers are formed on facing sidewalls of the adjacent gates. A cell pad contact hole is formed aligned to the gates and gate spacers that exposes the source/drain region in the integrated circuit substrate. A first poly film is formed in the cell pad contact hole. An ion region is formed in the source/drain region by ion-implanting through the first poly film and a second poly film is formed on the first poly film that substantially fills the cell pad contact hole.

Description

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Claims

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Application Information

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Owner SAMSUNG ELECTRONICS CO LTD
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