3 results about "High resistivity" patented technology

A radio frequency integrated circuit with a silicon-on-insulator substrate includes a buried oxide layer that is disposed over a silicon substrate. The silicon-on-insulator substrate has a silicon layer that is disposed over the buried oxide layer. The integrated circuit includes a transistor disposed on the silicon layer, and a guard-ring in the silicon-on-insulator substrate that surrounds the transistor on the silicon layer. Depletion regions on the silicon substrate corresponding to areas surrounding the transistor is defined by the application of a voltage to the guard-ring. Isolation of radio frequency transmission lines on silicon-on-insulator substrates is also possible with this configuration.

The invention relates to a high-resistivity high-entropy alloy film and a preparation method thereof, and belongs to the field of multi-principal-element alloy film materials. The novel high-entropy alloy film component contains six elements of Fe, Co, Ni, Al, Mn and W elements with different proportions, and the atomic percentages are 25%-35%, 25%-35%, 10%-25%, 5%-15%, 5%-15% and 5%-10% respectively. The preparation method comprises the following steps of ultrasonically cleaning a substrate, preparing a composite target, carrying out vacuumizing on a vacuum chamber, filling the vacuum chamberwith argon, carrying out pre-sputtering, heating the substrate and carrying out sputtering. A prepared film sample is smooth in surface, uniform in thickness and fine in structure, and the structureis a single-phase BCC solid solution, and is free of phase separation or intermetallic compound generation. According to the preparation method, the novel magnetic high-entropy alloy film with high hardness and high resistivity can be prepared, the thickness of the novel magnetic high-entropy alloy film is 500-2000 nm, and the highest resistivity is about 1800 microhm . m.

The invention includes a two terminal switching device having two stable resistivity values for each applied voltage, which when a voltage of not more than a first threshold voltage (Vth1) is applied, becomes in a first state having a higher resistivity, whereas when a larger second threshold voltage (Vth2) or more is applied, becomes in a second state having a lower resistivity; a resistance connected in series to the switching device; a terminal for applying a bias voltage (Vt) to both ends of a series circuit of the switching device and the resistance; a first pulse inputting terminal; and a second pulse inputting terminal. The invention provides a simple realization of a flip-flop circuit for a sequential logic circuit.