1 results about "Reverse leakage current" patented technology
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Reverse leakage current in a semiconductor device is the current from that semiconductor device when the device is reverse biased. When a semiconductor device is reverse biased it should not conduct any current, however, due to an increased barrier potential, the free electrons on the p side are dragged to the battery's positive terminal, while holes on the n side are dragged to the battery's negative terminal. This produces a current of minority charge carriers and hence its magnitude is extremely small. For constant temperatures, the reverse current is almost constant although the applied reverse voltage is increased up to a certain limit. Hence, it is also called reverse saturation current.
The invention provides a preparation method of a power diode. The preparation method comprises the following steps: providing a substrate and growing an N type layer; forming a terminal protection ring; forming an oxide layer, and performing knot guiding on the terminal protection ring; forming a gate oxide layer, and depositing a polycrystalline silicon layer on the gate oxide layer; forming an N type heavily doped region; forming a P+ region; performing ion bombardment on a wafer, etchingphotoresist, and enlarging the photo-etched window; forming a P type body region; performing thermal annealing to activate the injected impurities; performing front metallization and back metallization. According to the preparation method of the power diode, the photo-etched window is enlarged by the ion bombardment to the photoresist which is used as a masking layer when being injected to form the P type body region; the ion bombardment time can be adjusted to control the feature size of the polycrystalline siliconphotoresist, so as to adjust the length of the P type body region, namely the length of an MOS channel, and optimize the relation between the reverse leakage current and the forward voltage drop of the device.