Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell
A technology of solar cells and copper indium gallium selenide, which is applied in coatings, circuits, electrical components, etc., can solve the problems of potential safety hazards, uneven distribution of selenium, and reduced utilization of selenium, so as to reduce production costs and simplify the preparation process , The effect of component segregation improvement
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[0030] Implementation case 1
[0031] The preparation method of the copper indium gallium selenium film used as the light absorption layer of the solar cell is as follows:
[0032] (1) Install Mo target and CIGS target in the magnetron sputtering chamber, and install the cleaned soda lime glass substrate, and then vacuumize the chamber to 1×10 -3 Below Pa, add 99.999% high-purity Ar gas, and use a DC power supply to sputter a double-layer Mo film with a total thickness of 0.5μm on the substrate. The sputtering conditions are: the substrate rotation speed is 12rpm, and the substrate temperature is 550 ℃, the target base distance is 9cm, the flow of Ar gas is 100SCCM, the current of the DC power supply is 0.6A, the voltage is 210V, the sputtering pressure of the first layer of Mo is 2Pa, the corresponding sputtering time is 10min, the second layer of Mo The sputtering pressure is 1Pa, and the corresponding sputtering time is 10min;
[0033] (2) After the Mo layer is prepared, use the RF
Example Embodiment
[0036] Implementation case 2
[0037] The preparation method of the copper indium gallium selenium film used as the light absorption layer of the solar cell is as follows:
[0038] (1) Install Mo target and CIGS target in the magnetron sputtering chamber, and install the cleaned soda lime glass substrate, and then vacuumize the chamber to 1×10 -3 Below Pa, add 99.999% high-purity Ar gas, and use a DC power supply to sputter a double-layer Mo film with a total thickness of 0.5μm on the substrate. The sputtering conditions are: the substrate rotation speed is 12rpm and the substrate temperature is 100 ℃, target base distance is 9cm, Ar gas flow rate is 100SCCM, DC power supply current is 0.4A, voltage is 140V, the sputtering pressure of the first layer of Mo is 3Pa, the corresponding sputtering time is 5min, the second layer of Mo The sputtering pressure is 0.5Pa, and the corresponding sputtering time is 15min;
[0039] (2) After the Mo layer is prepared, use the radio frequency power su
Example Embodiment
[0042] Implementation case 3
[0043] The preparation method of the copper indium gallium selenium film used as the light absorption layer of the solar cell is as follows:
[0044] (1) Install Mo target and CIGS target in the magnetron sputtering chamber, and install the cleaned soda lime glass substrate, and then vacuumize the chamber to 1×10 -3 Below Pa, add 99.999% high-purity Ar gas, and use a DC power supply to sputter a double-layer Mo film with a total thickness of 0.5μm on the substrate. The sputtering conditions are: the substrate rotation speed is 8rpm, and the substrate temperature is 450 ℃, the target base distance is 9cm, the flow of Ar gas is 100SCCM, the current of the DC power supply is 0.6A, the voltage is 210V, the sputtering pressure of the first layer of Mo is 2Pa, the corresponding sputtering time is 10min, the second layer of Mo The sputtering pressure is 0.2Pa, and the corresponding sputtering time is 15min;
[0045] (2) After the Mo layer is prepared, use the RF
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