Semiconductor radiator and processing method thereof

[0044] Select T2 pure copper with a diameter of 49mm as the raw material, cut the T2 pure copper into a cylindrical blank with a thickness of 40mm with a sawing machine; anneal the cylindrical blank in a well-type vacuum annealing furnace at 500°C; then roll it with T200 swing machine for one pre-forming, and the T200 oscillating rolling machine has a work rate of 8.4mm / s; then use the well-type vacuum annealing furnace for the second annealing treatment; then put the workpiece into the lower part of the T630 oscillating rolling machine In the mold, the upper mold adopts a circular track for swing forming, the holding time is 1s, and the pressure is 40% of the total pressure, and then a turning is carried out by the workshop, and finally the semiconductor radiator is obtained.

[0046] Select T2 pure copper with a diameter of 49mm as the raw material, cut the T2 pure copper into a cylindrical blank with a thickness of 50mm with a sawing machine; anneal the cylindrical blank in a well-type vacuum annealing furnace at 600°C; then use T200 swing rolling machine for one pre-forming, and the work rate of T200 oscillating rolling machine is 10mm / s; then use the well-type vacuum annealing furnace for the second annealing treatment; then put the workpiece into the lower mold of T630 oscillating rolling machine In the middle, the upper mold adopts a circular track for rotary rolling, the holding time is 1.2s, and the pressure is 50% of the total pressure, and then a turning is carried out by the workshop, and finally the semiconductor radiator is obtained.

[0048] Select T2 pure copper with a diameter of 49mm as the raw material, cut the T2 pure copper into a cylindrical blank with a thickness of 60mm with a sawing machine; anneal the cylindrical blank in a well-type vacuum annealing furnace at 700°C; then use T200 swing rolling machine for one pre-forming, and the T200 oscillating rolling machine has a work rate of 20mm / s; then use the well-type vacuum annealing furnace for the second annealing treatment; then put the workpiece into the lower mold of the T630 oscillating rolling machine In the middle, the upper mold adopts a circular trajectory for rotary rolling, the holding time is 3s, and the pressure is 60% of the total pressure, and then a turning is carried out by the workshop, and finally the semiconductor radiator is obtained.