Nitride based semiconductor laser device

2. Second Embodiment

[0090]As to a nitride based semiconductor laser device according to a second embodiment, the difference from the nitride based semiconductor laser device 1 according to the first embodiment will be described.

[0091]FIG. 5 is a vertical sectional view of the nitride based semiconductor laser device according to the second embodiment. In FIG. 5, a vertical section of the nitride based semiconductor laser device 1 along a [0001] direction is shown, similarly to the vertical section shown in FIG. 2 in the first embodiment. A vertical section taken along a line A2-A2 shown in FIG. 5 is the same as the vertical section of the nitride based semiconductor laser device 1 shown in FIG. 1.

[0092]A first dielectric multilayer film 210 is formed on a light emission facet 1F of the nitride based semiconductor laser device 1. The first dielectric multilayer film 210 has a structure in which an AlOXNY film (X211a and an Al2O3 film 212a are laminated in this order. Here, the refractiv

3. Third Embodiment

[0096]As to a nitride based semiconductor laser device according to a third embodiment, the difference from the nitride based semiconductor laser device 1 according to the first embodiment will be described.

[0097]FIG. 6 is a vertical sectional view of the nitride based semiconductor laser device according to the third embodiment. In FIG. 6, a vertical section of the nitride based semiconductor laser device 1 along a [0001] direction is shown, similarly to the vertical section shown in FIG. 2 in the first embodiment. A vertical section taken along a line A2-A2 shown in FIG. 6 is the same as the vertical section of the nitride based semiconductor laser device 1 shown in FIG. 1.

[0098]A first dielectric multilayer film 210 is formed on a light emission facet 1F of the nitride based semiconductor laser device 1. The first dielectric multilayer film 210 has a structure in which an AlN film 211b, an AlOXNY film (X212b, and an Al2O3film 213b are laminated in this order. The

4. Fourth Embodiment

[0102]As to a nitride based semiconductor laser device according to a fourth embodiment, the difference from the nitride based semiconductor laser device 1 according to the first embodiment will be described.

[0103]FIG. 7 is a vertical sectional view of the nitride based semiconductor laser device according to the fourth embodiment. In FIG. 7, a vertical section of the nitride based semiconductor laser device 1 along a [0001] direction is shown, similarly to the vertical section shown in FIG. 2 in the first embodiment. A vertical section taken along a line A2-A2 shown in FIG. 7 is the same as the vertical section of the nitride based semiconductor laser device 1 shown in FIG. 1.

[0104]A first dielectric multilayer film 210 is formed on a light emission facet 1F of the nitride based semiconductor laser device 1. The first dielectric multilayer film 210 has a structure in which an AlOXNY film (X211c, an AlOXNY film (X>Y) 212c, and an Al2O3 film 213c are laminated in thi