Semiconductor recording device

a recording device and semiconductor technology, applied in the field of semiconductor recording devices, can solve the problems of writing error propagating to the already written first page, error propagating to the first page, and writing error, so as to prevent the propagation of writing error due to cell sharing, prevent the propagation of writing error, and prevent the effect of cell sharing

Active Publication Date: 2011-02-17
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The technical effect of this patented technology is that it prevents writing errors when multiple pages share one memory element for redundancy purposes. It does this by performing a process called rewriting or deleting corrections on each page before restoring any lost data. This helps avoid having too many storage space needed while still maintaining high reliability.

Problems solved by technology

This patent describes a method called MultiLevel Flash Memory (MFRAM) technology for storing multiple levels of data per unit area in a single chip. However, when writing data into MFRAMs, there is a possibility of causing errors during the writing process. These errors include incorrect writing of certain words and data stored in different ways.

Method used

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  • Semiconductor recording device
  • Semiconductor recording device
  • Semiconductor recording device

Examples

Experimental program
Comparison scheme
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embodiment 1

[0061]FIG. 4 shows a configuration view of a semiconductor recording device according to embodiment 1 of the present invention. In the present embodiment, an interface 1 is an interface for receiving a command and data from a host apparatus not shown in the drawing and transferring the data.

[0062]When receiving a write command from the host apparatus, a first ECC generator 2 (hereinafter simply referred to as an ECC generator 2) adds an error correction parity to received writing data. In more detail, an ECC parity of M words (M is a natural number) is added to N words extracted at intervals of A words in the inputted data of (A*N) words (A and N are natural numbers) to generate A number of the first ECC codes of (N+M) words. Meanwhile, the ECC parity is a code having a function of error correction. Here, in the present embodiment, the explanation will be made assuming that N is four and M is one. In addition, ECC parity is generated to at least the data of a first page of a memory cel

modified example

[0079]Next, a modified example of the present embodiment will be explained. This modified example is a case where the information of the cell sharing in a physical block is not disclosed. Accordingly, in this modified example, the ECC generator generates the ECC parities of all pages. Referring to FIG. 9, a process of this case will be explained. In (9-1) of FIG. 9 shows that a writing error occurred in the writing of page (K+1). It is not known whether page (K+1) is the first page or the second page and that the page is in the relation of cell sharing with which page. However, if the second page, the first page being in the relation of cell sharing with page (K+1) is included in page 0 to page K before it. FIGS. 9(9-2) and (9-3) are explanation views in the case of recovering the error occurrence block, FIG. 9(9-2) is a physical block in which the error occurred, and FIG. 9(9-3) is a new physical block after recovering the data. In the process of this case, the error flag generator 7

embodiment 2

[0084]Next, using FIG. 10, a semiconductor recording device according to embodiment 2 of the present invention will be explained. The present embodiment improves an error resistance in the reading in addition to an error correction in the writing. In FIG. 10, an output of the data distributor 3 is given to the second ECC generators 11a to 11e. The second ECC generators 11a to 11e generates the ECC parity to the distributed data, and sets the ECC parity and data, that is, the ECC code in units of page. The output of the ECC is directly given to the data writers 4a to 4e. In addition, outputs of the data readers 12a to 12e are given to the data recovering part 9 via second ECC correctors 13a to 13e. When an error occurred and the error is correctable, the second ECC correctors 13a to 13e give the data after the correction based on the ECC parity in units of page generated by the second ECC generators 11a to 11e. The data readers 12a to 12e read the data related to an address included in

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Abstract

An error correction code of (N+M) words is configured by adding an ECC parity of M word (M is a natural number) to N words extracted at an interval of A words with respect to data of (A*N) words (A and N are natural numbers) inputted via an interface 1. A data distributor 3 distributes (N+M) words to the respective (N+M) physical blocks to record by A words. In a case where a writing error has occurred, data recorded in a cell sharing page of the page and in a page of another physical block configuring the error correction code is read. A disappearing correction is carried out to the data of the cell sharing page by using the data, and thus the data of the cell sharing page is recovered and written. In this manner, in the multi-level nonvolatile memory, an error in writing of a certain page can be prevented from propagating to a written page sharing a cell.

Description

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Claims

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Application Information

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Owner PANASONIC CORP
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