Computed Tomography using Intersecting Views of Plasma using Optical Emission Spectroscopy during Plasma Processing

a plasma processing and computed tomography technology, applied in the direction of projection reconstruction, instruments, analysis by electrical excitation, etc., can solve the problems of inconsistency in the production and ultimately in the device being produced, and loss of all local variations of chemical species concentrations

Active Publication Date: 2018-09-06
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a technology that uses optical emission spectroscopy (OES) to monitor and control the chemical reactions in plasma processing. The technology involves using multiple detectors placed along multiple axes to capture the optical spectra from the plasma chamber and create a detection grid above the substrate. This allows for the identification of chemical species in real-time and the control of the plasma process through adjusting the various process variables. The technology also utilizes computed tomographic techniques to localize and pinpoint the locations of the chemical compositions within the etch chamber. Overall, the technology improves the accuracy and efficiency of plasma processing.

Problems solved by technology

It is known that elevated local concentrations of these species can produce areas of faster or slower processing, which may lead to inconsistencies in the production and ultimately in the devices being produced.
As a result, all local variations of chemical species concentrations are generally lost.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example plasma processing

Systems

[0018]In the development of plasma processes, it is useful to know the two-dimensional distribution of chemical species of interest above the surface of the substrate being processed. With this knowledge, changes in the system design and / or process parameters can be made to minimize variations of the processing outcome across the substrate.

[0019]In addition, a detection of an abrupt change in particular chemical species in the plasma can signal the end of a plasma processing step (i.e., endpoint). For example, a detection of a chemical species than the one that was being etched on the substrate may indicate that the etching process is complete. Ability to determine the plasma processing step endpoint across the entire surface of the substrate leads to improved device yields. This is because the processing step does not end prematurely.

[0020]FIGS. 1A and 1B show an example of a plasma processing system 10 suitable for use with an embodiment of the technology described herein. ...

example methodological implementation

[0078]FIG. 6 shows an example process 600 illustrating the technology as described herein. The example process 600 may be implemented as part of computed tomographic reconstruction (TR) system. That system is part of or works in cooperation with a plasma OES system.

[0079]At block 610, a TR system obtains light measurements from the detection grid in the plasma. The detection grid is formed by the intersecting rays of a collection of optical detectors configured to receive incoming rays from plasma over a substrate on a substrate holder in an etch chamber of a plasma processing system. These measurements includes intensity of particular wavelengths and for particular bands of wavelengths.

[0080]At block 620, the TR system generates a computed tomographic reconstruction of chemical species of the plasma. The computed tomographic reconstruction includes chemical species identification (622), spatial location determination (624), and the association between the two (626). More specifical...

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Abstract

Described herein are technologies to facilitate computed tomographic techniques to help identifying chemical species during plasma processing of a substrate (e.g., semiconductor wafer) using optical emission spectroscopy (OES). More particularly, the technology described herein uses topographic techniques to spatially resolves emissions and absorptions in at least two-dimension space above the substrate during the plasma processing (e.g., etching) of the substrate. With some implementations utilize optical detectors positioned along multiple axes (e.g., two or more) to receive incident incoming optical spectra from the plasma chamber during the plasma processing (e.g., etching) of the substrate. Because of the multi-axes arrangement, the incident incoming optical spectra form an intersecting grid.

Description

BACKGROUND OF THE INVENTION[0001]Often, the production of semiconductor devices, displays, photovoltaics, etc. involves, for example, plasma etching. Plasma etching is a form of plasma processing of semiconductor material and is often used to fabricate integrated circuits. Plasma etching typically involves the generation of a glow discharge (i.e., plasma) by application of radio-frequency or microwave power in means familiar to one skilled in the art. Ions, neutral and exited atoms from the plasma are applied to the wafer.[0002]During the process, the plasma generates volatile etch products from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma.[0003]In plasma processing, the chemistry of the plasma strongly affects the processing rate. This is particularly true about the local chemistry of the plasma. The local chemistry of the plasma is the local concentrations of various chemical species in the plasma environment p...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G01N21/73H01J37/32G06T11/00G01J3/443H01L21/3065H01L21/67
CPCG01N21/73H01J37/32972H01J37/32422G06T11/003G01N2201/1293H01L21/3065H01L21/67069H01J2237/334G01J3/443G01N21/68G01N2021/1787A61B5/0059
Inventor MORVAY, DANIELHAN, TAEJOONVUKOVIC, MIRKO
Owner TOKYO ELECTRON LTD
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