12 results about "Plasma processing" patented technology

An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

The plasma processing apparatus includes main electrodes 5, 31 opposed to each other with a plasma processing space 15 interposed therebetween. The plasma processing apparatus further has a side electrode 6 opposed to side faces 5B-1, 5B-2 of the main electrode 5, as well as a side electrode 32 opposed to side faces 31B-1, 31B-2 of the main electrode 31. Therefore, in addition to the plasma processing space 15 between the main electrode 5 and the main electrode 31, an electric field can be formed in spaces between the side faces of the main electrodes 5, 31 and the side electrodes 6, 32, the spaces serving as predischarge areas 16-1, 16-2. By this electric field, processing gas present in the predischarge areas 16-1, 16-2 can be transformed into plasma. Electrons and excitation species of the plasma generated in these predischarge areas 16-1, 16-2 can be supplied directly to the plasma processing space 15.

Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.

The present invention provides a radio frequency (RF) filtering circuit and a plasma processing apparatus employing the RF filtering circuit, wherein the RF filtering circuit comprises a primary filter and a secondary filter, the secondary filter comprises two or more filters connected in parallel, the primary filter is selectively connected to one of the secondary filters through a switch; the RFfiltering circuit further comprises a heating means and a DC power supply for heating the heating means; the primary and secondary filters are disposed between the heating device and the DC power source for filtering radio frequency signals from the heating device into the DC power supply. Utilizing the RF filtering circuit of the present invention may greatly reduce the tuning difficulty, improving the accuracy of the RF filtering circuit.

Provided are a low-temperature formation method for emitter tips including copper oxide nanowires or copper nanowires and a display device or a light source manufactured using the same. The low-temperature formation method includes preparing a substrate having an exposed copper surface. The copper surface contacts an oxide solution at a low temperature of 100° C. or less to grow copper oxide nanowires on the surface of the substrate. Optionally, a reduction gas or a heat is supplied to the copper oxide nanowires, or plasma processing is performed on the copper oxide nanowires, thereby reducing the copper oxide nanowires to copper nanowires. Thus, emitter tips including copper oxide nanowires or copper nanowires are formed densely at a low temperature such that the emitter tips have a shape and length suitable for emission of electrons.

The invention provides a plasma processing chamber and a base manufacturing method therefor, and the chamber comprises a cavity. A base is disposed below the cavity and used for carrying a substrate. Reaction gas enters into the cavity from the top of the cavity, and is activated into plasma under the action of radio frequency heat, thereby achieving the processing of the substrate on the base. The method comprises the following steps: providing a base body and setting a cooling liquid channel on the base body; employing hot pressing to enable a first insulating layer to be pasted at the upper part of the base body, wherein the interior of the first insulating layer is provided with a heating apparatus; and employing hot spraying to make anticorrosion coating layer at the periphery of the base body. The chamber and method can prevent arc pollution and metal pollution, and cannot cause the melting of a material layer because of the pressure and temperature difference in a manufacturing process.

The invention discloses an atmosphere plasma body numerical control processing method of a free-form surface optical element, and belongs to the filed of plasma body processing big-bore-diameter non-spherical optical elements. The atmosphere plasma body numerical control processing method of the free-form surface optical element aims at resolving the problems of machining efficiency and surface quality of the high-precise big-bore-diameter non-spherical optical elements. The method includes the steps that a plasma body torch with the big bore diameter or a plasma body torch with the medium bore diameter or a plasma body torch with the small bore diameter is installed on a working frame; an optical element to be processed is installed on a ground electrode in a clamping mode; the plasma body torch with the big bore diameter or the plasma body torch with the medium bore diameter or the plasma body torch with the small bore diameter is made to approach the surface to be processed; pre-heating is conducted; a radio frequency power source is started; the plasma body torch with the big bore diameter or the plasma body torch with the medium bore diameter or the plasma body torch with the small bore diameter is made to move in a multi-freedom-degree mode; the optical element to be processed is taken out. The plasma body torches with three different bore diameters are used for conducting atmosphere plasma body processing on the big-bore-diameter complex curved-surface optical elements.

An Dielectric window of an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, a dielectric window 100 that form an upper window of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, wherein the dielectric window 100 is formed as one body from one or more dielectric members, and bonded with a ceramic reinforcing member 120 to at least one surface of the upper surface and the lower surface of the dielectric window 100, including a dielectric window supporting unit 500 supporting at least one of the dielectric window 100 and the ceramic reinforcing member 120 by penetrating at least one of the dielectric window 100 and the ceramic reinforcing member 120 and being connected with a supporting member 12 installed above the main container 10, is provided, so it is possible to minimize power loss by the replacement of a dielectric supporting structure at a region where an antenna is installed, with ceramic.