Lower electrode assembly and plasma processing device thereof

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems of affecting the etching quality, tolerance of the edge of the substrate to be processed, the gap between lifting pins and pin holes becoming larger, etc.

Active Publication Date: 2021-06-25
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the process of processing and assembling the plasma processing device, there may be tolerances between the various components, so it is impossible to ensure that the lifting pins connected to the lifting mechanism and the pin holes on the electrostatic chuck achieve a high degree of concentricity. As the pin moves up and down, the lift pin may rub against the wall of the pin hole
In order to avoid this, the hole diameter of the pin hole in the electrostatic chuck needs to be enlarged, but the pin hole with a larger hole diameter will cause the gap between the lifting pin and the pin hole to become larger, and an excessively large gap will easily lead to gap arc discharge, thus cause product damage
In addition, when the electrostatic chuck is heated and cooled, the expansion coefficient of the electrostatic chuck may be different from that of the lift pin, so that the pin holes of the lift pin and the electrostatic chuck cannot guarantee concentricity.
[0005] In the process of processing the substrate, if the lift pins and the lift pin holes on the electrostatic chuck do not reach a high concentricity, the lift pins may be inclined relative to the electrostatic chuck, which will cause the substrate to be processed to go up and down with the electrostatic chuck. The disks are not perfectly parallel, which affects the alignment of the substrate to be processed on the electrostatic chuck, which in turn affects the quality of the etch at the edge of the substrate to be processed

Method used

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Embodiment Construction

[0036] In order to facilitate the understanding of the features, content and advantages of the present invention and the effects it can achieve, the present invention is hereby combined with the accompanying drawings, and described in detail in the form of implementation as follows, and the accompanying drawings used herein are only intended to The purpose of illustration and auxiliary instructions is not necessarily the true proportion and precise configuration of the present invention after implementation, so the scale and configuration relationship of the attached drawings should not be interpreted to limit the scope of rights of the present invention in actual implementation.

[0037] figure 1 It is a structural schematic diagram of a lower electrode assembly of the present invention.

[0038] Please refer to figure 1 , the lower electrode assembly 100, comprising: an electrostatic chuck 110, a number of lifting pin holes 120, a number of lifting pins 130, a number of por...

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PUM

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Abstract

The invention relates to a lower electrode assembly and a plasma processing device thereof. The lower electrode assembly comprises: an electrostatic chuck comprising a bearing surface for bearing a to-be-processed substrate; a plurality of lifting pin holes penetrating through the electrostatic chuck, lifting pins respectively positioned in the lifting pin holes; porous sleeves located in the lifting pin holes and arranged around the lifting pins in a surrounding mode, wherein gaps are formed between the porous sleeves and the lifting pins, a plurality of pores are formed in the porous sleeves, and the pores are communicated with the gaps; an air floatation channel positioned in the electrostatic chuck and communicated with pores in the porous sleeves; and a gas conveying device used for conveying gas into the air floatation channel, so that a gas film is formed between the porous sleeve and the lifting pin. According to the invention, gas is conveyed into the air floatation channel through the gas conveying device, so that the gas film is formed between the porous sleeve and the lifting pin, friction between the lifting pin and the lifting pin hole can be avoided, the gap between the lifting pin and the lifting pin hole can be shrunk to be very small, and very high potential and energy can be resisted without generating electric arcs.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a lower electrode assembly and a plasma processing device thereof. Background technique [0002] When processing semiconductor process parts (such as substrates), in order to ensure the uniformity of the process part processing, it is necessary to ensure that it is placed horizontally during the processing process. In addition, the cleanliness of the vacuum reaction chamber must also be ensured to prevent the process part samples from being damaged. pollute. [0003] A traditional plasma processing device generally includes a vacuum reaction chamber, and a lower electrode assembly is arranged at the bottom of the vacuum reaction chamber, and the lower electrode assembly includes an electrostatic chuck, and the electrostatic chuck includes a bearing surface for carrying the substrate to be processed. wafer (wafer), several pin holes penetrate the electrostatic chuck, and se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/67H01L21/683
CPCH01J37/32715H01J37/32568H01J37/32724H01L21/67069H01L21/6833H01J2237/3343Y02P70/50
Inventor 黄允文
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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