How to Plasma etching?

Method for improving wire bonding performance,Pallet system used for plasma dry etching

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2 results about "Plasma etching" patented technology

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Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma generates volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma. Eventually the atoms of the shot element embed themselves at or just below the surface of the target, thus modifying the physical properties of the target.

Method for improving wire bonding performance

ActiveCN102446778AImprove bonding abilityImprove bindingSolid-state devicesSemiconductor/solid-state device manufacturingSulfideEngineering

The invention provides a method for improving the wire bonding capability, wherein the method is characterized by carrying out the following steps on a support plate before wire bonding implementation: A. cleaning the support plate; and B. carrying out plasma etching on the surface of the support plate. Through the steps, organics, flour dust, oxides and sulfides on the surface of the support plate can be removed, thus the metal layer surface of the support plate is clean, and the bonding performance of wires and the support plate is improved.

Method for improving wire bonding performance

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Owner:NEW FOUNDER HLDG DEV LLC

Pallet system used for plasma dry etching

InactiveCN105448776AEasy to disperseIncrease etch rateElectric discharge tubesSemiconductor/solid-state device manufacturingMetallurgyCvd graphene

The invention relates to the technical field of semiconductor processing and provides a pallet system used for plasma dry etching, which introduces a grapheme material or grapheme composite material layer to improve the surface heat dissipation capability and the temperature uniformity of a wafer. The pallet system comprises an aluminum pallet, helium hole, a sealing ring, a cover plate and the embedded grapheme material (or grapheme composite material) layer high in heat conductivity. The pallet system has the advantages and active effects that: the high-heat-conductivity grapheme material or grapheme composite material are used in the pallet system used for the r plasma dry etching, the instant heat dissipation capability of the wafer in the etching process is substantially improved, the temperature uniformity of the surface of the wafer is conveniently controlled, the qualified rate of etched products is improved, and the operation window of the etching process is enlarged.

Owner:SINO NITRIDE SEMICON

2 results about "Plasma etching" patented technology

Method for improving wire bonding performance

Pallet system used for plasma dry etching

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