Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers

a thin film magnetic element, spin-valve technology, applied in the direction of nanoinformatics, magnetic bodies, instruments, etc., can solve the problems of irregular magnetic recording pattern recorded on the magnetic recording medium, and achieve the effect of preventing magnetic recording errors, good heat resistance, and high reliability

Inactive Publication Date: 2005-02-15
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The technical effects of this patent text are as follows: 1. The thin film magnetic head has good heat resistance and a strong magnetic field at the interface between the antiferromagnetic and ferromagnetic layers. This allows for a reliable alignment of the magnetization direction, preventing the generation of Barkhausen noises and ensuring stable output waveforms. 2. By preventing the generation of large step heights in the shield layer, magnetic recording errors are reduced and the distortion of the inductive head formed on the shield layer is minimized. This ensures reliable insulation properties between the inductive head and the shield layer, resulting in a highly reliable thin film magnetic head.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the performance characteristics of a write-coupled magnesist random access memory device called a TFSAM-1 crystal disc because its use has several advantages over existing devices like dynamic RAM (RAM)-resistive films. One advantage includes improved data transfer capabilities due to increased storage capacity without increasing size dimensions while maintaining stable operation even if there are multiple layers of interference fields caused by external influences. Another important feature involves reducing impedance mismatches associated with the electrical connection between different parts within the same component. Additionally, the patented solution provides a way to position the polarity of the magnonic layer nearer towards the center axis of the spacer core than the antiferrino barrier layer. By adjusting the orientation of the polarized magnectic layer relative to the antirrochoid coil, alignment can occur less easily compared to previous designs where only the antiparallel/fixed magneitive layer was previously included.

Method used

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  • Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers
  • Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers
  • Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers

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Experimental program
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Effect test

first embodiment

[First Embodiment]

FIG. 1 shows a cross section of the structure of the spin-valve type thin film magnetic element in the first embodiment of the present invention viewed from the opposed face side to the recording medium. FIGS. 2 and 3 show a thin film magnetic head comprising the spin-valve type thin film magnetic element according to the present invention.

Shield layers are formed on and under the spin-valve type thin film magnetic element 1 according to the present invention separated by gap layers. A regenerative GMR head h1 is composed of the spin-valve type thin film magnetic element, the gap layers and the shield layers.

A recording inductive head h2 may be laminated on the regenerative GMR head h1.

The GMR head h1 comprising the spin-valve type thin film magnetic element 1 is provided at the trailing side 151d of a slider 151 together with the inductive head h2, and constitutes a thin film magnetic head 150 to enable sensing of a recorded magnetic field from a magnetic recording m

second embodiment

[Second Embodiment]

FIG. 4 is a vertical cross section illustrating the spin-valve type thin film magnetic element according to the second embodiment of the present invention. FIG. 5 is a cross section showing the structure of the spin-valve type thin film magnetic element shown in FIG. 4 viewed from the opposed face side to the recording medium.

This spin-valve type thin film magnetic element 100 is, like the spin-valve type thin film magnetic element 1 shown in FIG. 1, attached at the end of the trailing side 151d of the floating type slider 151 provided in the hard disk device, and senses the recorded magnetic field of the hard disk.

The magnetic recording medium such as the hard disk travels in the Z direction, and the direction of the leakage magnetic field from the magnetic recording medium is along the Y direction.

The spin-valve type thin film magnetic element 100 aligns, like the spin-valve type thin film magnetic element 1 shown in FIG. 1, the magnetization direction of the free

third embodiment

[Third Embodiment]

FIG. 6 is a cross section showing the structure of the spin-valve type thin film magnetic element in the third embodiment of the present invention viewed from the opposed face side to the recording medium.

The spin-valve type thin film magnetic element 300 according to the third embodiment, like the spin-valve type thin film magnetic element described above, is attached at the end of the trailing side of the floating type slider provided in the hard disk device to sense the recorded magnetic field from the hard disk.

The magnetic recording medium such as the had disk travels in the Z direction, and the leakage magnetic field from the magnetic recording medium is directed in the Y direction.

The magnetization direction of the free magnetic layer 5 is aligned in the direction substantially perpendicular to the magnetization direction of the pinned magnetic layer by the exchange bas method using the bias layer 6 made of an antiferromagnetic material in the spin-valve type t

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Abstract

The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.

Description

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Claims

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Application Information

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Owner TDK CORPARATION
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