The invention provides an ion implantation device. The device comprises a shielding room, an ion source, an extraction electrode, an analyzer, an analysis diaphragm, a focusing lens, an accelerating tube, a symmetric electrostatic scanning electrode and a uniform magnetic field parallel lens which are successively arranged. A first chamber and a second chamber which are isolated from each other are arranged in the shielding room. A high-voltage bin is arranged in the first chamber. A target chamber is arranged in the second chamber. The ion source, the extraction electrode, the analyzer and the analysis diaphragm are arranged in the high-voltage bin. The accelerating tube is arranged in the first chamber. A first outlet for an ion beam to enter the accelerating tube is formed in the high-voltage bin. The first chamber is provided with a second outlet for the ion beam to enter the symmetric electrostatic scanning electrode. The symmetric electrostatic scanning electrode and the uniformmagnetic field parallel lens are arranged in the second chamber. A target table, an orientation table, a wafer library and at least one manipulator for transferring wafers are arranged in the target chamber. The target chamber is provided with an injection port for the ion beam to be injected into the wafers on the target table. The device provided by the invention has the advantages of simple structure, low cost, convenience for realizing high-energy high-precision injection and the like.