4 results about "Conducting channel" patented technology

A portable sensor device incorporates a low-power, nanostructure sensor coupled to a wireless transmitter. The sensor uses a nanostructure conducting channel, such as a nanotube network, that is functionalized to respond to a selected analyte. A measurement circuit connected to the sensor determines a change in the electrical characteristic of the sensor, from which information concerning the present or absence of the analyte may be determined. The portable sensor device may include a portable power source, such as a battery. It may further include a transmitter for wirelessly transmitting data to a base station.

The invention relates to an LDMOS (Laterally Diffused Metal Oxide Semiconductor) device with a transverse composite buffer layer structure, belonging to the technical field of power semiconductors. In the invention, the transverse composite buffer layer structure is introduced into an electric conducting channel region in a drift region of a conventional LDMOS device; the transverse composite buffer layer structure consists of an N-type doped pillar region and a P-type doped pillar region which are transversely arrayed at intervals; and the N-type doped pillar region and the P-type doped pillar region are parallel to the current direction between a source electrode and a drain electrode of the whole device. In the invention, the transverse composite buffer layer structure is adopted to ensure that the pressure-resistant performance of the device can be improved and the specific on-resistance of the device is reduced; when the device is manufactured, a plurality of high-energy ion implantations and knot pushing are adopted to respectively form the N-type doped pillar region and the P-type doped pillar region; the composite buffer layer is of a transverse structure; and therefore, the N-type doped pillar region and the P-type doped pillar region with better process consistency can be obtained, the problem that the concentration of a conducting layer among multilayer doped buried layers in a longitudinal composite buffer layer structure is reduced is not caused and the LDMOS device with more excellent performances is obtained.

The invention discloses an Ni film annealing patterned graphene preparation method based on 3C-SiC/chlorine gas reaction, which mainly solves the problem that the graphene prepared by the prior art can cause damage and result in electron mobility reduction when being used for photoetching technology as a transistor channeling material. The preparation method comprises the following steps: (1) growing a carbonization layer on an Si substrate as a transition layer; (2) growing a 3C-SiC film on the carbonization layer; (3) depositing SiO2 on the surface of the 3C-SiC film, and etching a pattern on the SiO2; (4) reacting the patterned sample wafer with Cl2 to generate a carbon film; (5) removing the SiO2 except the pattern; (6) depositing an Ni film on the carbon film by using an electron beam; and (7) putting the sample wafer with the deposited Ni film in Ar gas, and annealing for 15-30 minutes so that the carbon film reconstitutes the patterned graphene in the pattern position. The invention has the advantages of simple technique and high safety; the graphene can be directly used as a conducting channel without photoetching when making a transistor on the graphene; and the graphene can be used for making graphene transistors with superhigh mobility.

The invention discloses a radiating device of an LED lamp. The radiating device is characterized by comprising an upper radiator and a lower radiator, wherein the upper radiator comprises a base, and a boss upwards projected from the center of the base; the boss is perpendicular to the base, and is provided with a horizontal light source surface at the top; the size of the light source surface is equivalent to the size of an LED light source fixed thereon; the light source surface and the LED light source have an excellent heat conducting channel; the cross section radius of the boss is kept consistent from the light source surface to the base; the lower radiator is matched below the base of the upper radiator; the lower radiator and the base have a heat conducting channel; a light emitting plane of the LED light source is covered with a diffusion lens; and the diffusion lens diffuses light rays of the LED light source to a whole space. The radiating device of the LED lamp keeps excellent heat conductivity of stamped aluminum alloys, is higher in precision, prevents the secondary processing, saves the cost, and is fast in processing time.