5 results about "Extreme ultraviolet" patented technology

An EUV mirror arrangement (100) has a multiplicity of mirror elements (110, 111, 112) which are arranged alongside one another and jointly form a mirror surface of the mirror arrangement. Each mirror element has a substrate (120) and a multilayer arrangement (130) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV), said multilayer arrangement comprising a multiplicity of layer pairs (135) having alternate layers composed of a high refractive index layer material and a low refractive index layer material. The multilayer arrangement has an active layer (140) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field. For each active layer provision is made of an electrode arrangement for generating an electric field acting on the active layer.

The invention relates to a type critical illumination system for extreme ultra-violet lithography, belonging to the field of a critical illumination system in an extreme ultra-violet lithography system. The type critical illumination system comprises a light condensing system, a relay system, a photoetching system vacuum tank body and a corrugated pipe, wherein the light condensing system comprises a light source, a light condensing primary mirror, a light condensing system secondary mirror, a scrap removing system and a light condensing system vacuum tank body; the scrap removing system is arranged on a symmetry axis of a light source emergent sector along a light path; the light condensing system secondary mirror and the light condensing primary mirror are sequentially arranged behind the scrap removing system, and the light source, the light condensing system secondary mirror and the light condensing primary mirror commonly form a Schwartz-Kierard system; the light condensing system secondary mirror and the light condensing primary mirror are both arranged in the light condensing system vacuum tank body; the front end of the scrap removing system is close to the light source, and the rear end of the scrap removing system is fixedly connected with the rear end of the light condensing system secondary mirror. According to the type critical illumination system, the light source collecting solid angle can reach 0.48Sr, the shielded center area is less than 25%, the luminous energy collecting efficiency is greatly improved, an effective action distance of the scrap removing system can be increased and the scrap removing effect can be well achieved.

The invention discloses a method for generating an extreme ultraviolet coherent light source with approximate circular deflection. The method comprises the following steps of (S1) enhancing linear polarization incident laser until the intensity level of the linear polarization incident laser reaches 1013-1014W/CM(2); (S2) performing interaction on the enhanced incident laser and diatomic gas molecules to generate a harmonic; adjusting an included angle between the polarization direction of the linear polarization incident laser and a molecular axis until a harmonic stage required for generation of the light source is acquired; and (S3) converting spectra of two harmonic components of which the energy intensities are equal to each other and the relative phases are 90 degrees in the harmonic stage into two attosecond pulses, and synthesizing the two attosecond pulses to obtain the extreme ultraviolet coherent light source with approximate circular deflection. A harmonic spectrum has two components in two different directions; the energy intensities of the components of the harmonic spectrum in the harmonic stage are equal to each other; and the relative phases are 90 degrees. By the method for generating the extreme ultraviolet coherent light source with approximate circular deflection, the generated extreme ultraviolet coherent light source with approximate circular deflection is high in harmonic efficiency and short in pulse width.

The invention relates to a laser plasma extreme ultraviolet light source target optimization method, which comprises the following steps of: growing a tin film on a target substrate for generating laser plasma in an electron beam evaporation manner to form a solid film target with limited mass, and controlling the tin amount consumed by single action of laser by controlling the thickness of a tin layer; when the high-energy pulse laser acts with the target material to generate plasma, the generation efficiency of extreme ultraviolet light and the generation of chips are optimized by controlling the tin amount of the thin film target. The amount of tin fuel growing on the surface of the target material is adjusted by controlling the thickness of the thin film, so that tin can be fully utilized under the action of single laser pulse and light spots, the laser conversion efficiency and the utilization rate of working substances of the target material can be effectively improved, and pollution of scraps to an optical system is reduced.