5 results about "Multiple quantum" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The invention belongs to the field of semiconductor optoelectronic materials, and provides a quantum well green LED epitaxial structure with strain-reducing structure, comprising a sapphire substratelayer arranged from bottom to top, a GaN low-temperature nucleation layer, u-GaN layer, n-GaN lay, first strain reducing layer, InGaN / GaN quantum well active region, electron blocking layer and p-GaNlayer; The InGaN / GaN quantum well active region comprises a GaN barrier layer and a periodic structure located on the GaN barrier layer, wherein each period of the periodic structure comprises a second strain reduction layer, an InGaN quantum well layer, a third strain reduction layer and a GaN barrier layer from bottom to top; The first strain reduction layer is an InGaN monolayer or an InGaN / GaNsuperlattice, and the lattice constants of the second strain reduction layer and the third strain reduction layer are smaller than the InGaN quantum well layer and larger than the GaN barrier layer.The invention weakens the polarization effect in the active region of the green LED quantum well and improves the radiation recombination probability of electrons and holes. The defect density in theactive region of InGaN / GaN multiple quantum wells is reduced, which can be used in the green LED field.