10 results about "Monolayer" patented technology

A luminescent solar collector is provided comprising a substrate and a light energy converter, such as a photocell, operatively connected thereto. The substrate is molded from a thermoplastic composition comprising a polymer and a fluorescent dye or quantum dot dispersed therein. The polymer comprises a polycarbonate unit and a polyester unit derived from the reaction of isophthalic acid, terephthalic acid, and resorcinol (ITR). In further embodiments, the substrate comprises two or more layers including a fluorescent layer and an overcoat layer. The fluorescent layer comprises the fluorescent dye or quantum dot and a polycarbonate polymer. The overcoat layer comprises the ITR unit. The substrate, in single layer or multiple layer form, has reduced haze levels over a prolonged period of time.

Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSe_xS_1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.

The invention discloses a consumable electrode gas shielded arc deposition three-dimensional printing method. The method comprises the following steps: (1) a metal component three-dimensional digital model is designed in three-dimensional software; three-dimensional printing system software is adopted to slice the three-dimensional digital model to generate multiple two-dimensional data piece layers; and a processing path is formed through analysis; (2) single layer of metal components are molded through deposition by a welding gun according to the processing path; and in the welding gun, the fuse diameter is 0.08-1.5 mm, the welding voltage is 14-20 V, the welding current is 2-20 A, the wire walking speed is 1-12 mm.s-1, the wire feeding speed is 0.5-15 mm.s-1, and the shielded gas pressure is 2-5 Mpa; and (3) after deposition molding of the single layer of metal components, a three-dimensional control platform automatically adjusts a gap between the welding gun and a newest generated surface; and the three-dimensional deposition molding of the metal components is finished after multiple times of circulation. The three-dimensional metal components, molded by the method through deposition, improve the shape precision and the surface quality, and improve the metallographic structures and the uniformity; and in addition, the method has the advantages of low cost and high deposition rate.

A method of forming an etch mask includes: providing a substrate having thereon a material layer to be etched; forming a hard mask layer consisting of a radiation-sensitive, single-layer resist material on the material layer; exposing the hard mask layer to actinic energy to change solvent solubility of exposed regions of the hard mask layer; and subjecting the hard mask layer to water treatment to remove the exposed regions of the hard mask layer, thereby forming a masking pattern consisting of unexposed regions of the hard mask layer.

The invention belongs to the technical field of optical functional materials. A mixture system of a diimonium salt dye and a polyacrylate pressure-sensitive adhesive which contains alkoxy acrylate and has good compatibility with the diimonium salt dye is used, and a conventional coating preparation technology is used. The invention relates to a near infrared blocking membrane which is a single layer structure, and comprises a substrate, an adhesive glue film and an isolation film, the adhesive glue film thickness is between 5 ~ 50 mum, and an adhesive glue film coating liquid includes at least the following components by mass: 100 parts of the polyacrylate pressure-sensitive adhesive containing 9% ~ 50% of alkoxy acrylate, 0.5-10 parts of diimonium salt and 0.1-10 parts of a curing agent. The preparation method also includes curing process, and the curing conditions are 40-70 DEG C, 30-60% of RH, and 24-168 hours. The near infrared blocking membrane has good visible light region light transmittance, lower near infrared region light transmittance, and good stability of spectral integral blocking effect, and is applicable to the fields of electronics optical instruments and the like with shielding requirements on near infrared. The preparation method is simple in process and easy in operation and control, and production efficiency and rate of good product are high.

The invention relates to a preparation method and application of a wafer-level absolute single-layer transition metal chalcogenide. The preparation method comprises the following steps that (1) first annealing treatment is carried out on a sapphire substrate to obtain a sapphire substrate with an atomic-scale flat surface; (2) a transition metal salt solution is loaded on the atomic-scale flat surface of the sapphire substrate obtained in the step (1), and secondary annealing treatment is carried out to obtain a sapphire substrate loaded with a monodisperse transition metal source; and (3) the transition metal chalcogenide is grown on the sapphire substrate loaded with the monodisperse transition metal source through a chemical vapor deposition method. A two-dimensional material prepared by the method is an absolute single layer, batch preparation on wafer-level (two inches, four inches, eight inches and twelve inches) sapphire substrates can be realized, the crystal quality is high, the single crystal size is large, the operation is simple, the cost is low, and industrialization is easy.

The invention discloses a preparation method of a tungsten disulfide single crystal with a controllable layer number. According to the preparation method, hydrogen sulfide is taken as a sulfur source,and micro-patterning on a precursor WO3 is carried out in advance to accurately regulate and control the amount of the precursor, thereby realizing controllable preparation of single-layer, double-layer, three-layer and multi-layer WS2 single crystals. The method provided by the invention has the advantages of few required raw materials, high yield and good repeatability, and the obtained crystalhas high quality and high electron mobility, and is especially suitable for preparation of large-area uniformly-distributed WS2 single crystals with controllable layer number.

The invention relates to a high-temperature-resistant, water-oxygen-resistant and low-infrared-emissivity composite film for a ceramic-based composite material and a preparation method. The high-temperature-resistant, water-oxygen-resistant and low-infrared-emissivity composite film for the ceramic-based composite material is of a single-layer complex-phase structure, and the surface of a target object is covered with the composite film when the composite film is used; and the thin film is a continuously formed high-temperature conductive composite thin film and comprises two main components, wherein a high-conductivity metal material is used as a low-infrared-emissivity component, and an environment barrier coating material for the ceramic-based composite material is used as a protection component. After process optimization, the emissivity of the composite film of 2-22 microns can be less than 0.1 after the composite film is used in a high-temperature air environment of 1000 DEG C for 2 h, the composite film has excellent performances of low emissivity, high temperature resistance, water and oxygen resistance and the like, and the preparation process is simple and the operation is easy.

The invention provides a method for forming a multilayer composite film and a three-dimensional memory device. The method includes sequentially depositing a multilayer composite film on a three-dimensional memory chip, and obtaining a flat surface three-dimensional memory chip through subsequent annealing and CMP processes, wherein The stress coefficients of each layer of the film in the multilayer composite film are not completely the same. The existing single-layer film with a single stress coefficient is replaced by a multi-layer composite film with a combination of different stress coefficients, thereby solving the problem of increased defects, uneven thickness, and stress caused by the increase in the thickness of the single-layer single-stress coefficient cover film. There are many problems such as surface cracking caused by the increase.