8 results about "Sapphire" patented technology

A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.

The invention discloses a grinding process for optical sapphire crystal basal piece. It includes steps of coarse grind, precise grind and polishing. The one time qualification rate is more than 98.5%, the surface coarse is less than 0.3 nanometer, the flatness rate is less than 5 micrometer, the flatness is minus and plus 0.025 millimeters, the thickness size difference is less than plus and minus 0.025 millimeters.

The invention discloses a method for making a liquid metal waterproof shell, comprising the following steps: a, providing a sapphire sheet, and machining the side of the sapphire sheet into a shape suitable for being combined with an injection molding material; b, putting the sapphire sheet in the cavity of a mold, injecting liquid metal into the cavity of the mold, and making the liquid metal filling the cavity surround the side of the sapphire sheet, wherein the filling shape of the liquid metal is the shape of the peripheral part of a waterproof shell to be formed; and c, shrinking, solidifying and shaping the liquid metal at a predetermined rate to make the liquid metal combined with the side of the sapphire sheet. The sapphire material and the liquid metal are integrally molded, so that the product has no gap and has high waterproof, dustproof and shockproof performance, and a narrow-bezel screen can be realized.

The invention relates to the technical field of sapphire panel processing, and discloses a processing method of a large-size sapphire panel for an unmanned aerial vehicle, which comprises the following steps: processing sapphire crystals by a kyropoulos method, bonding the sapphire crystals, and finally processing the surfaces of the sapphires. According to the method, the purity of the sapphirescan be effectively improved, meanwhile, the weld joint connection at the splicing positions of the sapphires is stable, the requirement of a large-size sapphire panel is met, the anti-fracture effectof the sapphire panel can be improved, and the service life of the sapphire panel is prolonged.

The invention discloses an InGaN/GaN heterogeneous epitaxial structure and a growing method thereof. The epitaxial structure comprises a substrate which is made of sapphire, silicon, silicon carbide,gallium nitride or gallium arsenide, a GaN layer which grows on the substrate, an InGaN active region which grows on the GaN layer and a GaN layer which grows on the InGaN active region. According tothe InGaN/GaN heterogeneous epitaxial structure and the growing method thereof, the energy conversion efficiency of an InGaN-based solar cell can be remarkably improved.