8 results about "Blocking layer" patented technology

An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure.

In a liquid crystal display device including a light control film utilizing total reflection, a liquid crystal panel, and a directional backlight, the light control film includes a transparent base material, a light blocking layer, and a light diffusing portion. The light diffusing portion has a light output end surface on side closer to the transparent base material and a light input end surface on side opposite to the transparent base material, the light input end surface having a larger area than the light output end surface. A film thickness of the light diffusing portion is larger than a thickness of the light blocking layer. A material having a smaller refractive index than the light diffusing portion is present in a cavity defined by the light diffusing portion, and the film anisotropically diffuses light.

The invention provides a preparation method of an LED chip and an LED chip prepared by adopting the method. The LED chip comprises an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a current blocking layer and an ITO (Indium Tin Oxide) transparent conducting layer covered on the current blocking layer, and is characterized in that the N-type semiconductor layer, the light emitting layer, the P-type semiconductor layer, the current blocking layer and the ITO transparent conducting layer sequentially grow on a substrate, an N electrode is prepared on the N-type semiconductor layer, a P electrode is prepared on the ITO transparent conducting layer, an SiO2 protection layer is deposited at the upper surface of the chip at the outer side of the N electrode, and an SiON anti-reflection film and an SiO2 protection layer are sequentially deposited at the upper surface of the chip at the outer side of the P electrode. According to the invention, the SiON anti-reflection film is deposited at the surface of the ITO transparent conducting layer, and the SiON anti-reflection film is etched by using a phosphoric acid solution, thereby preventing the ITO transparent conducting film from being damaged or polluted in the manufacturing process of the chip, improving the quality of the ITO transparent conducting layer, enabling the chip voltage to be reduced while improving the brightness of the LED chip, and enabling an LED to be more energy-saving and more environment-friendly.

Methods of manufacturing non-volatile memory devices are provided including sequentially forming a tunnel insulating layer, a charge-trapping layer, a blocking layer and a conductive layer on a substrate having a channel region. The conductive layer is patterned to form a word line structure, and the blocking layer and the charge-trapping layer are etched using an aqueous acid solution as an etching solution to form a blocking layer pattern and a charge-trapping layer pattern.

The invention discloses a liquid crystal display device and a voltage detection method of an optical sensor. The liquid crystal display device comprises an active matrix base plate and a color film base plate which are positioned opposite to each other, a liquid crystal layer which is sandwiched between the active matrix base plate and the color film base plate, and a first optical sensor and a second optical sensor which are arranged in a non-pixel region on the active matrix base plate, wherein a non-light blocking layer is arranged above the first optical sensor; and a light blocking layer is arranged above the second optical sensor. The invention also provides the voltage detection method of the optical sensor. By the voltage detection method, the signal of extraneous light detected by the liquid crystal display device can be more accurate and the sensitivity of detecting the extraneous light can be improved.

This invention relates to optical information storage medium including a first base plate, a first register layer, a first reflection layer, a wall, a second register layer, a blocking layer, a second reflection layer and a second base plate, among which, the first register layer is set on the first base plate, the first reflection layer is set on the first register layer, the wall is set on the first reflection layer, the second register layer is on the wall and made of inorganic material, the blocking layer is on the second register layer, the second reflection layer is on the blocking layer and made of inorganic material and the second base plate is set on the second reflection layer.

The invention discloses a super-large section hollow split conductor-type water-blocking control cable for a train. A hollow layer is arranged at the center of the cable; a single conductor single-wire layer is arranged outside the hollow layer; multiple corrugated conductor strand blocks are arranged outside the conductor single-wire layer and a corrugated water-blocking layer is arranged outside each corrugated conductor strand block; water-blocking filling strips are arranged in gaps between the corrugated water-blocking layers; and a polyester tape, a braided tinned copper wire shielding layer, a non-alkali glass fiber tape and a flame-retardant polyvinyl chloride outer sheath are sequentially arranged outside the corrugated water-blocking layers. The control cable disclosed by the invention has the functions that the production technology difficulty is reduced, the characteristic requirements of tools, molds and equipment are low, the structure is stable, the skin effect is low, the carrying capacity is high, the water-blocking property is good, and the corrosion resistance, the oxidation resistance, the high temperature resistance, the oil control property and the corrosion resistance are good.

The invention discloses an industrial flexible-shielding cable, comprising a cable body; the cable body includes conductors, an insulation layer, a shielding layer and an outer sheath; a cross section of the cable body is of a circular structure; a plurality of the conductors are arranged inside the cable body; outsides of the conductors are fixedly connected by PVC (polyvinyl chloride) plastic connecting rods; one insulation layer is mounted outside the PVC plastic connecting rods; gap portions between the insulation layer and the PVC plastic connecting rods are provided with a water-blocking layer; the shielding layer wraps the insulation layer tightly in an extrusion manner; the shielding layer extrudes and wraps an armor layer, a reinforcing braid layer and a filling layer tightly and orderly from the inside to out; a plurality of drainage cores are mounted in the armor layer; a layer of the outer sheath wraps the filling layer in an extrusion manner. The cable has the advantages of reasonable structure design, good shielding property and long service life, and the like.