2 results about "Thin film electrode" patented technology

The invention provides a preparation method of a paper-graphite-CoPd thin film electrode. The preparation method comprises the following steps: (1) uniformly coating ordinary paper with a mixture of graphite and clay; (2) retaining the paper coated with the graphite for 20-30 min under the voltage of 1.0V, activating the coating graphite, and then performing electro-deposition on Co for 120-150 min under the voltage of -0.8V to obtain a paper-graphite-Co thin film electrode; and (3) enabling the paper-graphite-Co thin film electrode to stand in 0.8 mmol/L<-1> of PbC12 solution for 1-3 min to obtain the paper-graphite-CoPd thin film electrode, namely a graphite coated paper loading CoPd catalyst. According to the method, with pencil coated paper, Co is subjected to electro-deposition on the surface of conducting paper coated with graphite, and then partial Co is replaced with Pd to prepare the graphite coated paper loading CoPd catalyst, so that the electroreduction performance of hydrogen peroxide is improved. The preparation method overcomes the defects of high current collector cost, hydrogen peroxide decomposition and the like, and solves the problem that hydrogen peroxide based full cells are bad in cathode activity.

The invention relates to an electrical fire monitoring system and particularly relates to an electrical fire monitoring system based on a photoelectric thin film chip. The system is composed of an alpha-Ga2O3/beta-Ga2O3 phase junction thin film chip, an electric spark photoelectric detection peripheral circuit, a buzzer and a network communication module, wherein the alpha-Ga2O3/beta-Ga2O3 phase-junction thin film chip comprises an alpha-Ga2O3 thin film, a beta-Ga2O3 thin film, a Ti/Au thin film electrode and a sapphire substrate, the alpha-Ga2O3 thin film is arranged above the beta-Ga2O3 thinfilm, the thickness is 200 to 300nm, the thickness of the beta-Ga2O3 thin film ranges from 200 nm to 300 nm, an alpha-Ga2O3/beta-Ga2O3 phase junction thin film chip is formed, the sapphire substrateis used as a substrate for preparing the beta-Ga2O3 thin film, the area of the alpha-Ga2O3 thin film is half of the area of the beta-Ga2O3 thin film, the Ti/Au thin film electrode is located on a surface of the alpha-Ga2O3 thin film and a surface of the beta-Ga2O3 thin film, the shape of the Ti/Au thin film electrode is a square with the side length of 2.0 mm, the thickness of the Ti thin film electrode is 20-30 nm, the Au thin film electrode is located above the Ti thin film electrode, and the thickness of the Au thin film electrode is 60-90 nm. The electrical fire monitoring system is advantaged in that the electrical fire monitoring system can realize remote monitoring and alarming, and can be applied to remote electrical fire alarming and high-voltage transmission line corona monitoring.