Non-volatile memory system and method with variable error correcting capability

[0009] In order to solve the problem that the NANDFLASH read and write control error correction speed is fixed and the flexibility is not enough in the prior art, the present invention proposes a non-volatile storage system with variable error correction capability implemented by full hardware. The system includes: Bus interface module 101, RS encoder 102, RS decoder 103 and NAND read and write timing generator 105, data is written through the system bus through bus interface module 101, RS encoder 102, NAND read and write timing generator 105 and flash memory interface The storage system performs a read operation through a flash memory interface through a NAND read and write timing generator 105, an RS decoder 103, and a bus interface module 101. It is characterized in that the system also includes an error correction capability configuration module 104, which passes the bus interface module 101 performs command input and error correction information feedback with the outside world, and the error correction capability configuration module 104 performs error correction capability configuration on the RS encoder 102 and RS decoder 103 respectively according to the instructions, and respectively configures the RS encoder 102 and RS The feedback information obtained by the decoder 103 is output through the bus interface module 101