Non-volatile memory and method for manufacturing same
A non-volatile, manufacturing method technology, used in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve the problem that general products and methods do not have suitable structures and methods, affect the performance of memory operating margin components, Influence and other issues, to achieve the effect of avoiding programmatic interference and avoiding the second bit effect
Active Publication Date: 2012-05-23
MACRONIX INT CO LTD
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[0004] However, there is a second bit effect in nitride flash memory, that is, when the left bit is read, it will be affected by the right bit, or when the right bit is read, will be affected by the left bit
In addition, as the size of the memory shrinks, the length of the channel is also shortened, causing the second bit effect to be more significant, thus affecting the operation window and device performance of the memory.
In addition, due to the gradual reduction of the size of the memory, the distance between the components is also shortened, so the problem of programming interference is also prone to occur when adjacent memories are programmed.
[0005] It can be seen that the above-mentioned existing non-volatile memory obviously still has inconvenience and defects in product structure and use, and needs to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve
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[0046] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation and structure of the non-volatile memory and its manufacturing method proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , method, step, feature and effect thereof, detailed description is as follows.
[0047] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the drawings. Through the description of the specific implementation mode, a more in-depth and specific understanding of the technical means and effects adopted by the present invention to achieve the intended purpose can be obtained. However, the accompanying drawings are only for reference and description, and are no...
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The invention relates to a non-volatile memory and a method for manufacturing the same. The non-volatile memory comprises a substrate, a grid structure, a first doped region, a second doped region and a pair of isolation structures, wherein the grid structure is configured on the substrate and comprises a charge storage structure, a grid and gap walls, the charge storage structure is configured on the substrate, the grid is configured on the charge storage structure, the gap walls are configured on the lateral walls of the grid and the charge storage structure, the first doped region and the second doped region are respectively configured in the substrate at the two sides of the charge storage structure and at least are positioned below the gas walls, the pair of isolation structures are respectively configured in the substrate at the two sides of the grid structure. The invention also provides a method for manufacturing the non-volatile memory. With the adoption of the non-volatile memory and the method for manufacturing the same, a second bit effect and programmed interference during operation of the non-volatile memory can be avoided.
Description
technical field [0001] The invention relates to a non-volatile memory (non-volatile memory) and a manufacturing method thereof, in particular to a non-volatile memory capable of avoiding second bit effects and program disturbances. Memories and methods for their manufacture. Background technique [0002] Since non-volatile memory has the advantage that the stored data will not disappear after the power is turned off, many electrical products must have this kind of memory to maintain the normal operation of the electrical product when it is turned on. In particular, flash memory (flash memory) has become a memory element widely used in personal computers and electronic devices due to its ability to perform operations such as storing, reading, and erasing data multiple times. [0003] Nitride-based flash memory (nitride-based flash memory) is a common non-volatile memory at present. In the nitride flash memory, a charge trapping structure composed of an oxide layer-nitride l...
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IPC IPC(8): H01L27/115H01L21/762H01L21/8247H01L27/11568
Inventor 吴冠纬杨怡箴张耀文卢道政
Owner MACRONIX INT CO LTD
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