Pixel unit read-out circuit and method, and pixel array read-out circuit and method

A pixel unit and readout circuit technology, which is applied in circuits, TVs, color TVs, etc., can solve the problems of complex readout circuit structure and timing, high power consumption of image sensor chips, and low fill factor, so as to reduce complexity and Circuit area, simple structure, effect of improving fill factor

Active Publication Date: 2014-06-18
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a pixel unit readout circuit and its readout method, a pixel array readout circuit and its readout method, which are used to solve the problem of the readout circuit structure in the prior art. The time sequence is complex, which leads to problems such as high power consumption and low fill factor of the image sensor chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pixel unit read-out circuit and method, and pixel array read-out circuit and method
  • Pixel unit read-out circuit and method, and pixel array read-out circuit and method
  • Pixel unit read-out circuit and method, and pixel array read-out circuit and method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0067] Example one

[0068] This embodiment provides a pixel unit readout circuit, which is suitable for connecting the output terminal of the pixel unit 100 to read out the readout signal of the pixel unit. Preferably, the pixel unit includes a half-floating gate transistor, a photodiode is included between the drain and the half-floating gate of the half-floating gate transistor, and the source of the half-floating gate transistor is the output terminal of the pixel unit.

[0069] Such as Figure 5 As shown, the pixel unit readout circuit provided in this embodiment specifically includes: a voltage providing unit 200, a current comparing unit 300, and a counting unit 400. The output terminal of the pixel unit 100 and the output terminal of the voltage supply unit 200 are respectively connected to two input terminals of the current comparing unit 300, and the output terminal of the current comparing unit 300 is connected to the counting unit 400. The enable terminal EN is connected.

Example Embodiment

[0084] Example two

[0085] This embodiment provides a pixel array readout circuit.

[0086] The pixel array is as Figure 4 The array structure shown includes at least one column of pixel units 100. Each pixel unit 100 includes half of floating gate transistors. The sources of the half floating gate transistors in the pixel units in each column are connected to each other and serve as the output of each column of pixel units. end.

[0087] Continue to refer Figure 5 As shown, specifically, the pixel array readout circuit provided by this embodiment includes: a voltage providing unit 200, a current comparing unit 300, and a counting unit 400; the output terminal of each column of pixel unit 100, an output of the voltage providing unit 200 The terminals are respectively connected to two input terminals of the current comparison unit 300, and the output terminal of the current comparison unit 300 is connected to the enable terminal EN of the counting unit 400.

[0088] The voltage supply

Example Embodiment

[0107] Example three

[0108] This embodiment provides a pixel array readout circuit, and the pixel array in this embodiment is similar to the second embodiment.

[0109] Continue to refer Figure 5 As shown, the pixel array readout circuit provided by this embodiment includes: a voltage providing unit 200, a current comparing unit 300, and a counting unit 400. The output terminal of each column of pixel units 100 and the output terminal of the voltage supply unit 200 are respectively connected to the two input terminals of the current comparing unit 300, and the output terminal of the current comparing unit 300 is connected to the output terminal of the counting unit 400. The enable terminal EN is connected.

[0110] Specific as Picture 9 As shown, the pixel array readout circuit provided in this embodiment is different from the second embodiment in that, assuming that the pixel array has n columns of pixels, the pixel array readout circuit provided in this embodiment includes: a cur

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a pixel unit read-out circuit, a pixel unit read-out method, a pixel array read-out circuit and a pixel array read-out method. Each of the pixel unit read-out circuit and the pixel array read-out circuit at least comprises a voltage supply unit, a current comparison unit and a counting unit. The output end of one pixel unit and the output end of each voltage supply unit are respectively connected with two input ends of the corresponding current comparison unit. The output end of each current comparison unit is connected with the enabling end of the corresponding counting unit. The pixel unit read-out circuit and the pixel array read-out circuit, provided by the invention, have the characteristics of low power consumption and simple structure, conventional ADC (analog-to-digital conversion) modules in the pixel unit read-out circuit and the pixel array read-out circuit adopting current signals of a semi-floating gate transistor and the like as read-out signals are eliminated, and the complexity and area of each read-out circuit are reduced, so that the design cost and manufacturing cost of an image sensor chip are reduced.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products