Carbon nano tube field effect tube of double-material underlap heterogeneous grid structure
A technology of carbon nanotubes and field effect tubes, which is applied in the field of structural optimization of device performance, can solve problems such as device performance degradation, achieve high current switching ratio, low leakage current, and suppress the effect of leakage-induced barrier reduction
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[0018] The idea of the present invention will be described in further detail below in conjunction with the drawings.
[0019] figure 1 It is a schematic diagram of the vertical cross-sectional structure of the present invention.
[0020] Such as figure 1 As shown, the conductive channel 1, the source region 2 and the drain region 3 are all made of carbon nanotube materials, a fundamental semiconductor carbon nanotube is selected, and the middle part is used as a carbon nanotube field with a dual-material under-stack heterogeneous gate structure Conductive channel 1 of the effect tube. After the two ends of the intrinsic semiconductor carbon nanotubes are heavily doped with molecules or metal ions, they are used as the source regions of the carbon nanotube field effect tube with a bi-material under-stack heterogeneous gate structure. 2. Drain region 3; outside the conductive channel 1, source region 2 and drain region 3, a layer of gate oxide layer 4 is formed by atomic deposition
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