Array electrode based on electrochemical confined etching and processing method of array electrode

[0039] Example 1

[0040] An array electrode based on electrochemical confinement etching, which is composed of a main control system that sends control signals to an electrochemical workstation, an array electrode control and motion control system, and the electrochemical workstation, array The electrode control and motion control system feeds back the signal to the main control system.

[0041] The array electrode control controls the array electrode 1 and the chemical workbench 2, and the motion control system controls Z1 coarse motion 3, Z2 micro motion 4, micro force sensor 5, C axis 6, Y axis 7 and X axis 8;

[0042] The upper end of the array electrode 1 is connected to the Z2 micro-movement 4 through the supporting rod 9, the micro-force sensor 5 is arranged on the supporting rod 9, the Z2 micro-movement 4 is arranged on the Z1 coarse movement 3, and the Z1 coarse movement Move 3 moves on the upper cross beam of the gantry frame 11;

[0043] The sample 10 is placed on the top su

[0046] Example 2

[0047] In the array electrode based on electrochemical confinement etching described in embodiment 1, the array electrode 1 includes a plurality of unit electrodes, and each unit electrode corresponds to an analog switch, and the size and shape of each electrode must be uniform.

[0048] Its absolute size, like the principle of a dot matrix LCD screen, is related to the processing area and resolution required in practical applications.

[0049] It determines the resolution and dimensional accuracy of the two-dimensional plane of the etching process.

[0050] image 3 As shown, the analog switch includes a resistor R1, the resistor R1 is connected to the base b of the transistor Q1, and the emitter e of the transistor Q1 is connected to a power supply,

[0051] The collector c of the triode Q1 is connected to the collector c of the triode Q2, the emitter e of the triode Q1 is connected to an electrode, and the base b of the triode Q2 is connected to a resistor R2,

[0052]

[0070] Example 3

[0071] The processing method of the array electrode based on electrochemical confinement etching described in embodiment 1 is realized by the following steps:

[0072] Step 1: Place the sample 10 on the chemical workbench 2 and perform preliminary mechanical manual leveling;

[0073] Step 2: Operate the main control system to send motion control signals to the C-axis 6, Y-axis 7 and X-axis 8 in the motion control system to perform positioning before processing starts;

[0074] Step 3: Operate the main control system to send motion control signals to the Z1 coarse motion 3 and Z2 micro motion 4 in the motion control system to perform the approaching zero-finding action of the array electrode 1 micro force sensor 5 to the sample 10; usually the moving range of Z2 micro motion It is 10 times the Z1 coarse motion repeat positioning accuracy: 50-100 microns; the approaching zero-finding process in this step is the same as that of the atomic force microscope.

[0075] Step 4: