Method for reinforcing displacement irradiation resistance of inverted triple junction solar cell based on deep ion implantation

[0035] Specific implementation mode one: the following combination figure 1 Describe this embodiment mode, the method for strengthening the anti-displacement radiation of an inverted triple-junction solar cell based on the deep layer ion implantation method described in this embodiment, this method simulates implanting ions into the InGaAs active region of an inverted triple-junction solar cell, and changes the amount of implanted ions, Simulate the I-V characteristics of the implanted ions, obtain the amount of implanted ions when the difference between the I-V characteristics after the simulated implanted ions and the I-V characteristics of the unimplanted ions is less than 10%, calculate the voltage and ion beam current of the implanted ion machine, and set the implanted ion time. Ion implantation is carried out on the inverted triple-junction solar cell, and defect traps are introduced by ion implantation, which has a recombination effect on the defects caused by displacement

[0036] Specific implementation mode two: the following combination figure 2 Describe this implementation mode, this implementation mode will further explain the implementation mode 1, the specific process of this reinforcement method is:

[0037] S1. According to the structural parameters of the inverted triple-junction solar cell, simulate the implantation of ions into the InGaAs active region of the inverted triple-junction solar cell, and obtain the ion energy and range information of the implanted ions;

[0038] S2. Simulate the I-V characteristics of the inverted triple-junction solar cell without implanting ions and simulating the implanted ions respectively, change the amount of implanted ions, so that the variation of the I-V characteristics after simulating the implanted ions and the I-V characteristics of the non-implanted ions is less than 10%, record the implantation ion volume;

[0039] S3. Calculate the voltage and ion beam current of the implanted ion machine acc