Electrostatic protection structure and electrostatic protection circuit

The invention provides an electrostatic protection structure, and the structure comprises a buried oxide layer, a resistor, a field effect transistor and a diode assembly, wherein the field effect transistor and the diode assembly are arranged on the buried oxide layer; the field effect transistor comprises a first injection region, a first well region, a second injection region, a second well region and a third injection region, whereinthe first well region and the second well region are low-voltage well regions; insulating layers are arranged on the faces, away from the buried oxide layer, of the first well region and the second well region, the insulating layer of the first well region and the insulating layer of the second well region are in bridge connection to lead out a gate terminal, and the gate terminal is a high-voltage gate terminal. The first injection region and the third injection region are bridged to lead out a source end, and the source end is grounded; a drain terminal is led out of the second injection region; the first end of the resistor is connected with the gate end, the second end of the resistor is grounded, and the diode assembly is connected with the field effect transistor. Based on the embodiment of the invention, the gateelectrode of the field effect transistor is connected with the resistor in series and forms a capacitive coupling effect with the parasitic coupling capacitor between the drain electrode and the gateelectrode, so the conduction uniformity of the field effect transistor is improved.