Perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of difficulty in significantly improving the life of perovskite solar cells, poor stability of perovskite solar cells, etc., so as to reduce interface defects, prolong life, and reduce series connection. The effect of resistance

Inactive Publication Date: 2020-12-01
北京宏泰创新科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem of poor stability of perovskite solar cells in the prior art, and it is difficult to significantly improve the life of perovskite solar cells through existing packaging processes, the object

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Perovskite solar cell and preparation method thereof
  • Perovskite solar cell and preparation method thereof
  • Perovskite solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0053] In some embodiments, a method for preparing a perovskite solar cell is provided, such as Figure 4 shown, including:

[0054] S1 provides a transparent substrate layer;

[0055] S2 provides a transparent conductive film on the transparent substrate;

[0056] S3 provides an electron transport layer on the transparent conductive film;

[0057] S4 provides a perovskite absorbing layer onto the electron transport layer;

[0058] S5 provides an interface modification layer on the perovskite absorbing layer;

[0059] S6 provides a hole transport layer on the interface modification layer;

[0060] S7 provides an electrode onto the hole transport layer.

[0061] Specifically, the transparent conductive layer is an FTO transparent conductive film, or an ITO transparent conductive film.

[0062] Specifically, the specific process for providing the electron transport layer on the transparent conductive film includes a spin-coating coating process, a magnetron sputtering coating

Embodiment 1

[0095] S1 provides a glass substrate;

[0096] S2 Deposit FTO (fluorine-doped tin oxide) transparent conductive film on the glass substrate by magnetron sputtering coating method; the thickness of the transparent conductive film is 400nm; the square resistance is 10Ω / sq; then cut into 2cm*2cm size and cleaned.

[0097] S3 Spin-coat SnO on the substrate with deposited FTO 2 Nano-ions serve as the electron transport layer. The thickness of the electron transport layer is 50nm.

[0098] S4 Spin-coat the perovskite absorber layer on the substrate of the electron transport layer in two steps. Spin-coat lead iodide solution (1.3M, DMSO:DMF=9:1), put it on a hot stage and heat it at 70°C for 1 minute after spin-coating, take out the mixed solution of FAI / MABr after cooling (FAI:MABr:MACl= 10:1:1, isopropanol solution, 60mg / mL). Immediately after the spin-coating, heat on a hot stage at 150° C. for 15 minutes. The thickness of the perovskite layer is about 560nm.

[0099] S5

Embodiment 2

[0103] The glass substrate in S1 in embodiment 1 is changed into PET organic polymer substrate, S2, S3, S4, S6, S7 are all the same as S2, S3, S4, S6, S7 in embodiment 1 in this embodiment are the same;

[0104] S5 Spin coating on the perovskite absorbing layer to prepare the dibenzo-18-crown-6 interface modification layer. Use a pipette gun to draw 70 μL of dibenzo-18-crown-6 solution (isopropanol solution, 20 mg / mL), spin-coat at 3000 rpm for 30 s, and then perform annealing at 180° C. for 10 minutes.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention provides a perovskite solar cell, and the perovskite absorption layer comprises a compound with a chemical general formula of ABX3, and comprises an interface modification layer which comprises at least one of crown ether or a crown ether derivative; an interface modification layer comprising crown ether or a derivative thereof is introduced into a perovskite solarcell. A complex film layer with crown ether groups and second-order ions of metal B is formed at a grain boundary and an interface of a perovskite absorption layer of the perovskite solar cell. Sincethe crown ether has a hydrophobic external skeleton, a hydrophilic inner cavity which can be bonded with metal ions is formed. After a complex film layer is formed at a grain boundary or an interfaceof a perovskite absorption layer, the effect of isolating H2O, O2 and O3 is achieved. The influence of three-dimensional perovskite crystal decomposition or crystal phase state conversion on the current density of the perovskite solar cell can be prevented, defects are filled at the crystal boundary and the interface, the interface defects are reduced, the series resistance is reduced, and the parallel resistance is increased, so that the filling factor of the cell is increased, and the service life of the perovskite solar cell is prolonged.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner 北京宏泰创新科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products