FDSOI silicon epitaxial growth process optimization method
A technology of process optimization and silicon epitaxy, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of excessive loss of top-layer silicon and the inability of epitaxial growth of top-layer silicon to achieve the goal of making up for loss and increasing thickness Effect
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[0054] In order to better understand the present invention, the technical solutions in the embodiments of the present invention will be described in contemplation, and It is an embodiment of the invention, not all of the embodiments. Based on the embodiments in the present invention, those of ordinary skill in the art may belong to the scope of the present invention in the range of the present invention without all other embodiments obtained without making creative labor.
[0055] It should be noted that the terms "of the present invention" and "include" and "have" and "have any deformed", which are intended to cover the contained, such as a series of steps or units. The processes, methods, devices, products, or devices are not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or for these processes, methods, products, or equipment.
[0056] A FDSOI silicon epitaxial growth process optimization method
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