Non-plumbum series ferroelectric film with ingredient gradient distribution and its preparation method

A gradient distribution, ferroelectric thin film technology, applied in the field of non-lead ferroelectric thin film and its preparation, to achieve the effects of reducing leakage conduction, improving temperature characteristics, and broadening the application range

Inactive Publication Date: 2006-12-20
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology involves replacing some elements from Pb LTA by other metals like La, Ce, Pr, Nd, Eu, Gd, Tl etc., which are harmful substances that can affect human health when exposed through various ways such as smoking cigarettes, exposure to sunlight, use on electronic devices containing these components. By incorporating this new material into certain types of ceramics called "leadless systems," they may have better properties than traditional ones while reducing environmental concerns associated therewith.

Problems solved by technology

This patented technical problem addressed in this patents relates to finding ways to improve the thermal behavior and electric conductivity of various types of ceramics that exhibit specific physical or chemical features called compositional gradients during processing steps such as sintering processes. These techniques aim to achieve these improvements through adjustment of parameters like crystal growth rate, pressure, gas flow velocity, liquid feed pipe length, spray gun design, substrate type, and other factors related to the desired results.

Method used

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  • Non-plumbum series ferroelectric film with ingredient gradient distribution and its preparation method
  • Non-plumbum series ferroelectric film with ingredient gradient distribution and its preparation method
  • Non-plumbum series ferroelectric film with ingredient gradient distribution and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0021] Preparation of Ba(Ti 1-x sn x )O 3 , x=0, 0.05, 0.10 and 0.15 composition gradient ferroelectric thin film:

[0022] The chemical raw material used is barium acetate [Ba(CH 3 COO) 2 ], tin acetate [Sn(CH 3 COO) 4 ] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol ether. Firstly heat barium acetate and tin acetate (according to a certain stoichiometric ratio x=0.10) in glacial acetic acid solution to boiling, stop heating after 10 minutes, and cool to room temperature, the molar ratio of Ba+Sn to glacial acetic acid is 1: 10. Add the mixed solution of titanium isopropoxide, ethylene glycol ethyl ether and acetylacetone (AcAc) into the glacial acetic acid solution containing barium and tin, wherein: the molar ratio of Ti to AcAc is 1:2, titanium isopropoxide and The molar ratio of ethylene glycol ether is 1:10. Finally, ethylene glycol ether was added to adjust the concentration of the final solution to 0.3M. S

Embodiment 2

[0026] Preparation of Ba(Ti 1-x Zr x )O 3 , x=0, 0.09, 0.18 and 0.35 composition gradient ferroelectric thin film:

[0027] The chemical raw material used is barium acetate [Ba(CH 3 COO) 2 ], zirconium isopropoxide [Zr(OC 3 h 7 ) 4 ] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol ether. First heat barium acetate (according to a certain stoichiometric ratio x=0.35) in glacial acetic acid solution to boiling, stop heating after 5 minutes, and cool to room temperature, the molar ratio of Ba to glacial acetic acid is 1:10. Then the mixed solution of zirconium isopropoxide and titanium isopropoxide, ethylene glycol ethyl ether and acetylacetone (AcAc) is added to barium-containing glacial acetic acid solution, wherein: the molar ratio of Ti to AcAc is 1:2, (iso Titanium propoxide+zirconium isopropoxide): the molar ratio of ethylene glycol ether is 1:10. Finally, ethylene glycol ether was added to adjust the concentratio

Embodiment 3

[0031] Preparation of Ba(Ti 1-x Zr x )O 3 , x=0.15, 0.30, 0.50 and 0.70 composition gradient ferroelectric thin film:

[0032] The chemical raw materials and precursor solutions used are the same as in Example 2. The substrate used is Pt / Ti / SiO 2 / Si. First use the precursor solution of x=0.70 on the substrate LaNiO 3 / Pt / Ti / SiO 2 Coating 3 layers on / Si, then coating 3 layers with the precursor solution of x=0.50, then coating 3 layers with the precursor solution of x=0.30, and finally coating 3 layers with the precursor solution of x=0.15, In this way, along the film thickness direction, that is, along the direction from the film surface to the substrate, the content of zirconium gradually increases to form a downward gradient film. Each of the above layers must be heat-treated at 500°C for 5 minutes. Finally, the film was heat-treated at 650°C for 1 hour. Then a gold electrode is sputtered on its upper surface by DC sputtering method as an upper electro

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Abstract

The invention belongs to the area of ferro-electricity film of compositional gradient without lead and its the preparing method by chemical method. The Ba(Ti,Zr or Sn)O3 ferro-electricity film of compositional gradient introduced in the invention includes Ba(Ti1-x,Zr or Snx)O3, wherein X is 0-0.70. Gradient film Ba(Zr,Ti)O3(BZT) and Ba(Ti,Sn)O3(BTS) referred to the invention belong to non-lead system, that will not arise the pollution of lead in the preparing process, especially in the integration with Si process, and adjust the temperature broad. The material compared with barium strontium titanates in the structure characterizes in: Ba(Zr,Ti)O3(BZT) and Ba(Ti,Sn)O3(BTS) materials belong to beta-position substitution in ABO3 perovskite structure, its crystal size can be adjusted in a large range; in the property characterizes in: decreasing leakage conductance for film material, improving compressional resistance and broadening the applied range of gradient film. The Ba(Ti,Zr or Sn)O3 ferro-electricity film with compositional gradient introduced in the invention has larger dielectric constant and improved temperature character compared with BZT and BTS ferro-electricity film with the components distributing evenly along the thickness.

Description

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Claims

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Application Information

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Owner TONGJI UNIV
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