Semiconductor laser array device
a laser array and semiconductor technology, applied in lasers, laser cooling arrangements, laser details, etc., can solve the problem of limiting the output power of laser arrays, and achieve the effect of reducing the array, preventing degradation of durability and characteristics, and reducing the overall array
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embodiment 1
[0017]FIG. 1 is a partial perspective view showing the first embodiment according to the present invention. A semiconductor laser array device includes a plurality of semiconductor laser chips 1, a submount 3, and a heat sink 4.
[0018] The semiconductor laser chip 1 has an active layer, and a pair of cladding layers located on both sides of the active layer, in which light generated from the active layer by carrier injection passes through an emission region 2 in an end face for emitting the light exteriorly. On the upper surface of the semiconductor laser chip 1 formed is a first electrode, onto which a lead wire (not shown) is connected. On the lower surface of the semiconductor laser chip 1 formed is a second electrode, to which the submount 3 is electrically, thermally and mechanically connected by die bonding or the like.
[0019] The submount 3 is formed of an electrically and thermally conductive metal or another material having a good thermal conductivity, such as CuW (copper-...
embodiment 2
[0024] In this embodiment, the semiconductor laser chips 1 with smaller variations in oscillation wavelength are mounted in such a configuration as shown in FIG. 1.
[0025] In general, for product specifications of a semiconductor laser array device, a center wavelength λc and a full width at half maximum (FWHM) of the emission spectrum are specified. Therefore, when a plurality of semiconductor laser chips 1 are mounted, the oscillation wavelength of each chip is required to be screened.
[0026] Accordingly, it is preferable that the semiconductor laser chip 1, whose oscillation wavelength is in a range of the center wavelength λc ±4 nm, is screened to be mounted on the submount 3, thereby narrowing the emission spectrum bandwidth of the whole array and realizing a more monochromatic semiconductor laser array device.
embodiment 3
[0027] In this embodiment, the semiconductor laser chips 1 with smaller variations in oscillation threshold, external differential quantum efficiency and operating current are mounted in such a configuration as shown in FIG. 1.
[0028] In general, for product specifications of a semiconductor laser array device, a standard oscillation threshold Ith and the allowable range thereof, a standard is external differential quantum efficiency rex and the allowable range thereof, and a standard operating current Iop and the allowable range thereof, etc. are specified.
[0029] The oscillation threshold is defined as a current value at a point where a linear line during laser oscillation intersects the horizontal axis (current) in the current-optical power (I-P) characteristics of a semiconductor laser. The external differential quantum efficiency is defined as a slope ΔP / ΔI of the linear line during laser oscillation in the current-optical power characteristics. The operating current is defined...
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