Multivalue memory storage with two gating transistors

[0007]In the following detailed description, reference is made to the accompanying drawings which form a part hereof wherein like numerals designate like parts throughout, and in which are shown, by way of illustration, specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Therefore, the following detailed description is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims and their equivalents.

[0008]Embodiments of the present invention include a multivalue memory cell including two gating transistors arranged in parallel and a storage element such as a capacitor, onto which any one of four discrete voltages, or discrete voltage ranges, can be impressed; each voltage level or range of voltages may correspond in embodiments to a different data value repres...