Seasoning of deposition chamber for dopant profile control in LED film stacks

[0013]LEDs and related devices may be formed of a stack of materials, such as group III-V semiconductors. Exemplary embodiments of the present invention relate to seasoning or conditioning of a deposition chamber in preparation for growth of LED material layers in group LED film stacks, such as, but not limited to gallium nitride (GaN) films.

[0014]In an embodiment, a multi-chambered growth process separates or “splits” growths of different LED film stack layers into different chambers, for example, to avoid cross contamination between dopant species, such as between In and Mg and between Mg and Si.

[0015]In an embodiment, a first deposition chamber is seasoned with a source gas containing a first dopant while either no substrate or a dummy substrate is disposed in the first deposition chamber in preparation for epitaxially growing, in the first deposition chamber, a doped layer of the LED film stack, the doped layer also having the first dopant. In one such embodiment, a layer doped wit