Method for forming mask for forming contact holes of semiconductor device

a technology for semiconductor devices and contact holes, applied in semiconductor/solid-state device manufacturing, basic electric elements, electric devices, etc., can solve the problems of abnormal pattern formation, and insufficient protective layer formation in a wide region

Inactive Publication Date: 2012-08-30
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The technical effect of this patented technology described by this patents relates to creating a way to make contacts between different layers within a specific area during manufacturing processes without damaging them. This can help improve product quality while reducing costs associated therewith.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the accuracy of creation of small dimensions in integrated circuit devices due to limitations associated with traditional techniques such as single pattern lithographic processes or dual pattern lens printing technologies used when multiple layers have different depths. These issues can lead to defects called “undercutting” which occurs at certain points where there has been no protection layer present throughout the entire area covered by both the first and second photolithograms beforehand.

Method used

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  • Method for forming mask for forming contact holes of semiconductor device
  • Method for forming mask for forming contact holes of semiconductor device
  • Method for forming mask for forming contact holes of semiconductor device

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Embodiment Construction

[0020]Exemplary embodiments of the present invention will be described below in more detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. Throughout the disclosure, like reference numerals refer to like parts throughout the various figures and embodiments of the present invention.

[0021]The drawings are not necessarily to scale and in some instances, proportions may have been exaggerated in order to clearly illustrate features of the embodiments. When a first layer is referred to as being “on” a second layer or “on” a substrate, it not only refers to a case where the first layer is formed directly on the second layer or the substrate but also a case where a third layer e

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Abstract

A method for forming a mask for forming contact holes of a semiconductor device includes coating an etch target layer with a first photoresist layer, patterning the first photoresist layer in a type of lines and spaces to form a first photoresist pattern, wherein the first photoresist pattern comprises pads formed at both ends of the first photoresist pattern, and lines repeatedly formed between the pads at the both ends, forming a protective layer on a surface of the first photoresist pattern by performing a freezing process onto the first photoresist pattern, and forming a second photoresist pattern having a type of lines stretched in a second direction which is perpendicular to the first direction on the etch target layer including the protective layer.

Description

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Claims

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Application Information

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Owner SK HYNIX INC
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