Nitride-based electronic device and method for manufacturing same

Active Publication Date: 2019-09-26
WAVICE INC
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0023]According to a nitride-based electronic device and a method of manufacturing the same of the present invention, in a structure using a plurality of passivation layers and a plurality of resin layers, an upper layer covers both ends of a lower layer to prevent the ends from being exposed, thereby preventing a region between layers from being exposed so as to improve moisture resistance.
[0024]In

Problems solved by technology

However, a volume of the resin film may be changed due to changes in humidity and temperature, and the change in the volume of the resin film may cause a portion of a nitride-based lower protection layer to be delaminated.
Moisture may permeate into the delaminated portion of the protection layer, and surfaces of metal electrode pads may be easily oxidized due to the permeation of the moisture, which may lower the stability and reliability of the nitride-based electronic device which uses a high voltage.
Even if an opening irrespective of the exposure of the drain electrode pad is formed in the resin film in order to prevent the protection layer from being delaminated due to a change in volume of the resin film, fine moisture may be introduced into a gap between thin films, w

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitride-based electronic device and method for manufacturing same
  • Nitride-based electronic device and method for manufacturing same
  • Nitride-based electronic device and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

first exemplary embodiment

[0038]FIG. 1 is a cross-sectional view illustrating a part of a nitride-based electronic device according to a first exemplary embodiment of the present invention.

[0039]As shown in FIG. 1, the nitride-based electronic device according to the first exemplary embodiment includes a substrate 11, a channel layer 12 formed on the substrate 11, a barrier layer 13 formed on the channel layer 12, a first protection layer 14 disposed on the barrier layer 13 to expose a partial region of the barrier layer 13, a drain electrode 20 disposed on the barrier layer 13 exposed by the first protection layer 14, a second protection layer 30 disposed to cover an entire upper surface of the first protection layer 14 and a partial peripheral portion of an upper surface of the drain electrode 20, a drain electrode pad 40 disposed on the upper surface of the drain electrode 20 and a portion of the second protection layer 30 on the peripheral portion of the drain electrode 20, a third protection layer 50 confi

second exemplary embodiment

[0065]FIG. 3 is a cross-sectional view illustrating a nitride-based electronic device according to a second exemplary embodiment of the present invention.

[0066]Referring to FIG. 3, the nitride-based electronic device according to the second exemplary embodiment of the present invention is illustrated as further including a source electrode 70, a gate electrode 80, and a field plate 90 unlike the first exemplary embodiment shown in FIG. 1

[0067]FIG. 3 shows that, in a stacked structure of multiple protection layers, which is a characteristic configuration of the present invention, structures of upper protection layers, which completely cover protection layers disposed thereunder, are not limited to being formed on a drain electrode pad.

[0068]It may be understood that the field plate 90, which is in contact with an upper portion of the source electrode 70 and extends to an upper portion of a third protection layer 50 above the gate electrode 80, also functions as a source electrode pad (n

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a nitride-based electronic device and a method for manufacturing same, the nitride-based electronic device comprising a substrate, a metal electrode and a plurality of protection layers, wherein, among the protection layers, at least two protection layers covering one portion of the electrode so that one portion of the upper part of the electrode is exposed are configured so that the upper protection layer covers the end part of the lower protection layer so as to prevent the end part of the lower protection layer from being exposed.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner WAVICE INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products