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2 results about "Gallium oxide" patented technology

Ultra-precision machining method for gallium oxide substrate

ActiveCN105269450ANo stressHigh post-processing costLapping machinesSemiconductorPollution
The invention discloses an ultra-precision machining method for a gallium oxide substrate and belongs to the technical field of machining of an original semiconductor. The ultra-precision machining method includes the following steps that firstly, slicing is conducted, wherein a gallium oxide crystal is sliced, and a gallium oxide crystal substrate blank is obtained; secondly, grinding is conducted; thirdly, polishing is conducted, namely, according to rough polishing, silk is used as a polishing gasket, rough polishing is conducted on the ground gallium oxide crystal substrate, the gallium oxide crystal substrate obtained after rough polishing is obtained, according to finishing polishing, silk is used as a polishing gasket, finishing polishing is conducted on the gallium oxide crystal substrate obtained after rough polishing, the gallium oxide crystal substrate obtained after finishing polishing is obtained, and diamond polishing paste is used as a polishing addition agent; and fourthly, cleaning is conducted. The ultra-precision machining method has the beneficial effects that green machining is conducted, and environment friendliness is achieved since the polishing paste and the silk used in the method belong to green and non-pollution consumables, and pressure cannot be caused to the environment at all; low-cost machining is achieved due to the fact that the consumables used in the method are low-cost materials; and machining steps are simplified.
Owner:南京大劲精密机械有限公司

Gallium oxide-based ultraviolet detector and manufacture method therefor

ActiveCN108922931ASimple preparation processLow costFinal product manufactureSemiconductor devicesResponse sensitivityUltraviolet detectors
The present invention provides a gallium oxide-based ultraviolet detector, which comprises a gallium oxide crystal substrate, a graphene layer, a first ohmic contact electrode and a second ohmic contact electrode, wherein the first ohmic contact electrode is grown on a first plane of the gallium oxide crystal substrate; a second plane of the gallium oxide crystal substrate is formed with a needletip type structure; the graphene layer is located on the surface of the second plane of the gallium oxide crystal substrate and contacts with the needle tip type structure formed on the second plane of the gallium oxide crystal substrate; and the second ohmic contact electrode is grown on the surface of the graphene layer that is not in contact with the gallium oxide crystal substrate. The invention also provides a manufacture method for the gallium oxide-based ultraviolet detector. The gallium oxide-based ultraviolet detector and the manufacture method for the gallium oxide-based ultravioletdetector in the invention can improve the response sensitivity and the response speed of the ultraviolet detector; the process is simple; and the cost is low.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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