Gallium oxide-based ultraviolet detector and manufacture method therefor

一种紫外探测器、氧化镓的技术，应用在半导体器件、最终产品制造、可持续制造/加工等方向，能够解决肖特基结构制作工艺复杂、MSM结构响应速度慢、光电导结构暗电流大等问题，达到提高响应灵敏度以及响应速度、成本低廉、高响应速度的效果

Active Publication Date: 2018-11-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

However, Ga 2 o 3 The manufacturing process of the Schottky structure of the UV-based detector is relatively complicated, which increases the production cost; although the manufacturing process of the photoconductive structure and the MSM structure is relatively simple, the dark current of the photoconductive structure is large and the response sensitivity is low; the response speed of the MSM structure is slow.

Method used

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Embodiment Construction

[0034] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] In a first aspect, an embodiment of the present invention provides a Ga 2 o 3 base UV detector. Ga provided by the present invention 2 o 3 The basic ultraviolet detector includes: a gallium oxide substrate with multiple needle-like structures distributed on the front, a graphene layer on the front of the gallium oxide substrate, a ...

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Abstract

The present invention provides a gallium oxide-based ultraviolet detector, which comprises a gallium oxide crystal substrate, a graphene layer, a first ohmic contact electrode and a second ohmic contact electrode, wherein the first ohmic contact electrode is grown on a first plane of the gallium oxide crystal substrate; a second plane of the gallium oxide crystal substrate is formed with a needletip type structure; the graphene layer is located on the surface of the second plane of the gallium oxide crystal substrate and contacts with the needle tip type structure formed on the second plane of the gallium oxide crystal substrate; and the second ohmic contact electrode is grown on the surface of the graphene layer that is not in contact with the gallium oxide crystal substrate. The invention also provides a manufacture method for the gallium oxide-based ultraviolet detector. The gallium oxide-based ultraviolet detector and the manufacture method for the gallium oxide-based ultravioletdetector in the invention can improve the response sensitivity and the response speed of the ultraviolet detector; the process is simple; and the cost is low.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a gallium oxide-based ultraviolet detector and a manufacturing method thereof. Background technique [0002] In recent years, ultraviolet detectors have attracted much attention because of their great application value in both civil and military fields. Ultraviolet detectors have broad application prospects in space astronomical telescopes, military missile early warning, non-line-of-sight confidential optical communications, maritime fog-breaking pilots, high-voltage electricity monitoring, wild fire remote sensing, and biochemical detection. The ultraviolet detector has a high response to ultraviolet radiation and can convert optical radiation into electrical signals by using the photoelectric effect. The ultraviolet detector mainly includes an outer photoelectric effect device and an inner photoelectric effect device. External photoelectric effect devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/032H01L31/108H01L31/18
CPCH01L31/032H01L31/035281H01L31/1085H01L31/18Y02P70/50
Inventor 龙世兵覃愿董航何启鸣刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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