Device and method for testing electrical parameters of silicon-germanium/silicon multi-quantum well infrared sensitive material

A technology of multiple quantum wells and sensitive materials, which is applied in the field of electrical parameter testing devices of silicon germanium silicon multiple quantum wells infrared sensitive materials, can solve the problems that the four-probe method cannot be used to test the electrical properties of quantum well materials, etc., so as to improve the testing efficiency , The effect of simple structure and easy operation

Inactive Publication Date: 2019-01-01
NANJING UNIV OF SCI & TECH
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the traditional four-probe method cannot be used

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for testing electrical parameters of silicon-germanium/silicon multi-quantum well infrared sensitive material
  • Device and method for testing electrical parameters of silicon-germanium/silicon multi-quantum well infrared sensitive material
  • Device and method for testing electrical parameters of silicon-germanium/silicon multi-quantum well infrared sensitive material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0117] Step 1, performing MEMS process on a silicon-germanium-silicon multi-quantum well infrared sensitive material to obtain a material to be tested containing a test electrode;

[0118] combine Figure 4 The silicon germanium silicon multi-quantum well infrared sensitive material structure includes bottom contact layer, bottom isolation layer, silicon germanium / silicon multi quantum well structure and top contact layer in sequence from bottom to top. The silicon germanium / silicon multiple quantum well structure is composed of undoped single crystal silicon germanium layer and undoped single crystal silicon layer. The single crystal silicon germanium layer is adjacent to the top isolation layer and the bottom isolation layer respectively. The thickness of the crystalline silicon germanium layer (well) is 10nm, the mass content of germanium is 30%, the thickness of the single crystal silicon layer (barrier) is 30nm, and the number of silicon germanium / silicon cycles is 4 l

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a device and method for testing the electrical parameters of a silicon-germanium/silicon multi-quantum well infrared sensitive material. The device and the method of the invention are mainly applied to the measurement of the electrical parameters of a critical component, i.e., the silicon-germanium/silicon multi-quantum well infrared sensitive material, used in thermoelectric conversion of a micro-bolometer. The device mainly comprises an electrical parameter measurement module and a data transmission module. The to-be-measured silicon-germanium/silicon multi-quantum well infrared sensitive material is subjected to MEMS processing to manufacture a longitudinal conductive channel at first, and the temperature coefficient of resistance and the I-V curve of the to-be-measured material are obtained by using the device provided by the invention and a four-probe testing method. The device and the method solve the problem that the traditional four-probe method cannot test the electrical performance of quantum well materials; and since a wireless radio frequency module is used for transmitting data, the flexibility and portability of the device are improved, and thedevice has significance in engineering application.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner NANJING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap