G-C3N4 crystal phase/amorphous phase homojunction as well as preparation method and application thereof

A C3N4, g-c3n4 technology, applied in chemical instruments and methods, non-metallic elements, chemical/physical processes, etc., can solve problems such as increased complexity and difficulty, difficult growth control, complicated preparation process, etc., to achieve good photocatalysis The performance of degrading organic pollutants, expanding the structure level, and the effect of uniform size distribution

Active Publication Date: 2019-03-29
UNIV OF JINAN
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the document Chem Commun.2018, 54, 4720-4723, the crystalline phase-amorphous phase mixed calcination method is used to obtain the crystalline phase-amorphous homogeneous junction. The ratio

Method used

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  • G-C3N4 crystal phase/amorphous phase homojunction as well as preparation method and application thereof
  • G-C3N4 crystal phase/amorphous phase homojunction as well as preparation method and application thereof
  • G-C3N4 crystal phase/amorphous phase homojunction as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] 1.1 Heat 10 g of melamine to 600 °C at a heating rate of 2 °C / min and keep it warm for 2 hours to obtain a block carbon nitride precursor.

[0034] 1.2. Grind the bulk carbon nitride precursor in the above step 1.1 until it is powdered, take 2 g and disperse it in 5 ml deionized water, and process it ultrasonically for 1 h.

[0035] 1.3. Transfer the suspension in step 1.2 to a petri dish, and freeze-dry (i.e., vacuum freeze-dry) under the conditions of a vacuum degree of less than 20Pa and a freezing temperature of less than -20°C to obtain a light yellow powder.

[0036] 1.4. Heat the light yellow powder obtained in the above step 1.3 to 650°C at a heating rate of 60°C / min under the protection of argon gas, and then raise it to 700°C at a heating rate of 0.5°C / min and keep it warm for 2 hours. Afterwards, it is naturally cooled with the furnace to obtain the final carbon nitride product.

[0037] figure 1 with figure 2 It is the HRTEM diagram of the final produ

Embodiment 2

[0040] According to the method for embodiment 1, prepare crystalline phase / amorphous homogeneous junction carbon nitride (also referred to as C 3 N 4 homogeneous junction, the same below), the difference is: replace melamine with dicyandiamide, and at the same time ensure that 2 g of block carbon nitride can be obtained. The resulting homojunction carbon nitride morphology and figure 2 Similarly, it is a crystalline phase and an amorphous homogeneous junction structure. The size of carbon nitride nanosheets is 300-500 nm and the thickness is 5-30 nm. Calculated crystal phase C 3 N 4 with amorphous phase C 3 N 4 The area ratio between them is 1:4.

Embodiment 3

[0042] Crystal phase / amorphous homogeneous junction carbon nitride was prepared according to the method of Example 1, except that melamine was replaced by urea, and at the same time, it was ensured that 2 g of block carbon nitride could be obtained. The resulting homojunction carbon nitride morphology and figure 2 Similarly, it is a crystalline phase and an amorphous homogeneous junction structure. The size of carbon nitride nanosheets is 300-500 nm and the thickness is 5-30 nm. Calculated crystal phase C 3 N 4 with amorphous phase C 3 N 4 The area ratio between them is 1:4.

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Abstract

The invention discloses a g-C3N4 crystal phase/amorphous phase homojunction as well as a preparation method and application thereof. The homojunction is characterized in that crystal phases and non-crystal phases are alternately distributed on the same graphite phase C3N4 to form the homojunction. The preparation method comprises the following steps of performing primary heat polycondensation on nitrogen-containing organic precursors; grinding the obtained blocky graphite phase carbon nitride into powder; performing ultrasonic thinning and dispersion to obtain powder; performing secondary heatpolycondensation on the powder to obtain a product. The homojunction and the preparation method have the advantages that simplicity is realized; the implementation is easy; the cost is low; the repeated performance is good; the enlightening significance is realized on the synthesis of layered graphene semiconductor materials. The crystal phase and amorphous phase part of the obtained homojunctionis adjustable in proportion. Compared with the homojunction with the conventional appearance, the homojunction has higher catalysis activity, is favorable for the efficient separation of electron-hollow hole pairs, and improves the reaction activity. Compared with the homojunction prepared by a seed growth method, the homojunction has the advantages that the synthesis process is simple. In an aspect of visible light photocatalytic degradation, the relatively excellent photocatalytic performance is far higher than that of ordinary flaky carbon nitride.

Description

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Claims

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Application Information

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Owner UNIV OF JINAN
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