Preparation method of SnSe nanosheet

A technology of tin selenide and nanosheets, which is applied in nanotechnology, ion implantation plating, coating and other directions, can solve the problems of inability to obtain tin selenide, etc., and achieves no protective gas and carrier gas, less environmental pollution, and lower environmental pollution. High surface area effect

Inactive Publication Date: 2019-11-08
GUANGDONG UNIV OF TECH
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  • Application Information

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Problems solved by technology

[0005] The application provides a preparation method of tin selenide nanosheets, which effectively solves the technica

Method used

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  • Preparation method of SnSe nanosheet
  • Preparation method of SnSe nanosheet
  • Preparation method of SnSe nanosheet

Examples

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Embodiment 1

[0033] Example 1 of the present application provides the first preparation method of tin selenide nanosheets, the specific steps are as follows:

[0034] The tin selenide powder (its purity is 99.999%) of 0.197g is weighed and then poured into a crucible as an evaporation source, and a silicon wafer is placed at 2.5 cm above the evaporation source as a substrate. Vacuum up to 5×10 -5 At Pa, the evaporation source was evenly heated to 470° C., kept for 5 minutes for vacuum coating, and finally black deposits were obtained on the substrate to obtain tin selenide nanosheets.

[0035] Carry out X-ray diffraction detection to the tin selenide nanosheet that the application embodiment 1 makes, as figure 1 As shown, it can be seen that the tin selenide nanosheets are orthorhombic SnSe, and its diffraction peaks are consistent with the PDF#48-1224 standard card. In addition, there are diffraction peaks from Si, which come from the Si sheet of the substrate.

[0036] Scanning electron m

Embodiment 2

[0039] Example 2 of the present application provides a second method for preparing tin selenide nanosheets, the specific steps are as follows:

[0040]Weigh 0.197g of SnSe powder (99.999%) and pour it into a crucible as an evaporation source. Place an ITO conductive glass as a substrate at 2.4cm above the evaporation source. When the vacuum degree in the vacuum thermal evaporation coating machine reaches 2×10 -5 At Pa, the evaporation source was evenly heated to 460° C. and kept for 6 minutes, and finally tin selenide nanosheets with black deposits were obtained on the substrate.

[0041] The X-ray diffraction results, scanning electron microscope results and element distribution detection results of the tin selenide nanosheets in this example are similar to those of Example 1.

Embodiment 3

[0043] Example 3 of the present application provides a third preparation method of tin selenide nanosheets, the specific steps are as follows:

[0044] Weigh 0.197g of SnSe powder (99.999%) and pour it into a crucible as an evaporation source. Place a molybdenum foil as a substrate at 2.6cm above the evaporation source. When the vacuum degree in the vacuum thermal evaporation coating machine reaches 3.5×10 -5 At Pa, the evaporation source is evenly heated to 480° C. and kept for about 5 minutes, and finally tin selenide nanosheets with black deposits are obtained on the substrate.

[0045] The X-ray diffraction results, scanning electron microscope results and element distribution detection results of the tin selenide nanosheets in this example are similar to those of Example 1.

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Abstract

The invention belongs to the technical field of semiconductor materials, and particularly relates to a preparation method of a SnSe nanosheet. The preparation method of the SnSe nanosheet comprises the following steps that a vacuum coating method is adopted, SnSe is adopted as an evaporator source, a substrate is arranged above the SnSe evaporator source, the distance between the evaporator sourceand the substrate ranges from 2.4 cm to 2.6 cm, the temperature of vacuum coating ranges from 460 DEG C to 480 DEG C, the time of vacuum coating ranges from 5 min to 10 min, and the SnSe nanosheet isprepared on the surface of the substrate under the vacuum environment. A SnSe product with the nanosheet structure is prepared by improving relevant parameters of vacuum coating, and the technical problem that SnSe with the nanosheet microstructure cannot be prepared by an existing vacuum heat evaporation method is effectively solved.

Description

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Claims

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Application Information

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Owner GUANGDONG UNIV OF TECH
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